Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT

IF 2.5 4区计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IETE Technical Review Pub Date : 2024-02-19 DOI:10.1080/02564602.2024.2315628

Anupama Anand, Rakhi Narang, Dipendra Singh Rawal, Meena Mishra, Manoj Saxena, Mridula Gupta

引用次数: 0

Abstract

This study examines the extraction of small-signal equivalent circuit parameters, linearity and intermodulation metrics, and capacitance–voltage characteristics for both AlGaN and GaN channel HEMTs...

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分级氮化镓缓冲层厚度对氮化镓沟道 HEMT 的直流、射频、线性度、互调和非态击穿特性的影响

本研究探讨了如何提取 AlGaN 和 GaN 沟道 HEMT 的小信号等效电路参数、线性度和互调指标以及电容-电压特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IETE Technical Review 工程技术-电信学

CiteScore

5.70

自引率

4.20%

发文量

审稿时长

9 months

期刊介绍： IETE Technical Review is a world leading journal which publishes state-of-the-art review papers and in-depth tutorial papers on current and futuristic technologies in the area of electronics and telecommunications engineering. We also publish original research papers which demonstrate significant advances.