Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications

IF 3.7 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zi-Hao Fu;Ming-Xuan Li;Tzyh-Ghuang Ma;Chan-Shin Wu;Kun-You Lin
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引用次数: 0

Abstract

This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using $0.15~\mu \text{m}$ GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power ( $\text{P}_{\mathrm {sat}}$ ) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of $2\times1$ mm2. The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm $\text{P}_{\mathrm {sat}}$ , and a PAE over 28% from 24 to 32 GHz with a $2.4\times1.1$ mm2 chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications.
用于 5G/6G 应用的毫米波砷化镓超宽带中功率放大器和宽带大功率放大器
本文介绍了一种超宽带(UWB)中功率放大器(MPA)和一种工作在 5G/6G 频段的宽带大功率放大器(HPA)。通过采用 0.15~\mu \text{m}$ GaAs 伪态高电子迁移率晶体管 (pHEMT) 技术工艺,所提出的 UWB MPA 实现了 16.5 dB 的平均小信号增益、24 dBm 的饱和输出功率($\text{P}_{\mathrm {sat}}$)以及 24 至 38 GHz 超过 24% 的峰值功率附加效率(PAE),芯片面积为 2\times1$ mm2。宽带 HPA 的平均小信号增益为 17dB,$text{P}_{\mathrm {sat}}$ 为 29dBm,24 至 32 GHz 的 PAE 超过 28%,芯片面积为 2.4times1.1mm2 美元。测量结果证明了所提出的功率放大器在 5G/6G 毫米波应用中的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
8.50
自引率
2.20%
发文量
86
期刊介绍: The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.
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