Zi-Hao Fu;Ming-Xuan Li;Tzyh-Ghuang Ma;Chan-Shin Wu;Kun-You Lin
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引用次数: 0
Abstract
This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using
$0.15~\mu \text{m}$
GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power (
$\text{P}_{\mathrm {sat}}$
) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of
$2\times1$
mm2. The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm
$\text{P}_{\mathrm {sat}}$
, and a PAE over 28% from 24 to 32 GHz with a
$2.4\times1.1$
mm2 chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications.
期刊介绍:
The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.