Photoconductive Effects in Single Crystals of BaZrS3

IF 6.5 1区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Boyang Zhao, Huandong Chen, Ragib Ahsan, Fei Hou, Eric R. Hoglund, Shantanu Singh, Maruda Shanmugasundaram, Huan Zhao, Andrey V. Krayev, Han Htoon, Patrick E. Hopkins, Jan Seidel, Rehan Kapadia and Jayakanth Ravichandran*, 
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Abstract

Chalcogenide perovskites, such as BaZrS3, are emerging semiconductors with the potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photoexcited carriers has not been experimentally investigated extensively. We studied the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS3. We achieved Ohmic contacts to single crystals of BaZrS3 and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS3 to remove the surface oxide leads to dense deformation grain boundaries and to trap-dominated photoconductive response. In comparison, Ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving a high photon-to-excited-electron conversion efficiency in BaZrS3.

Abstract Image

Abstract Image

BaZrS3 单晶中的光电导效应
Chalcogenide perovskites(如 BaZrS3)是一种新兴的半导体,具有实现高光电转换效率的潜力。缺陷在光激发载流子的产生和收集效率中的作用尚未得到广泛的实验研究。我们研究了加工引发的缺陷对 BaZrS3 单晶体光电导特性的影响。我们实现了 BaZrS3 单晶体的欧姆接触,并观察到正表面光电压,这通常是在 p 型半导体中观察到的。然而,对 BaZrS3 进行机械抛光以去除表面氧化物会导致密集的变形晶界和陷阱主导的光电导响应。相比之下,在裂解晶体中实现的欧姆接触会留下较少的形变缺陷,并大大改善光电特性。缺陷控制的晶体生长和接触制造是在 BaZrS3 中实现高光子到受激电子转换效率的潜在限制因素。
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来源期刊
ACS Photonics
ACS Photonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.90
自引率
5.70%
发文量
438
审稿时长
2.3 months
期刊介绍: Published as soon as accepted and summarized in monthly issues, ACS Photonics will publish Research Articles, Letters, Perspectives, and Reviews, to encompass the full scope of published research in this field.
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