The Franz‐Keldysh effect in the optical absorption spectrum of TlGaSe2 layered semiconductor caused by charged native defects

Abstract

The Franz-Keldysh effect in the optical absorption edge of bulk TlGaSe2 layered semiconductor poled under an external electric field was investigated in the present work. The Franz-Keldysh shift below the optical band gap absorption region, as well as the quasi-periodic oscillations above the fundamental band gap of TlGaSe2, were observed. The measured changes in optical light absorption of the TlGaSe2 sample were revealed after poling processing. The poling technique is used to produce the built-in internal electric field within the TlGaSe2 semiconductor. The frozen-in internal electric field in TlGaSe2 was experimentally monitored through changes in the line–shape of the absorption spectra at the fundamental band edge. The observed results are accurately fitted with the theoretical line-shape function of the Franz - Keldysh absorption tail below the bandgap of TlGaSe2 and quasi-periodic oscillations above the bandgap. A good agreement between theoretical and experimental results took place. The present study demonstrated that the Franz - Keldysh effect can be used to identify and characterize the localized internal electric fields originating from the electrically active native imperfections in the TlGaSe2 crystals.