Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

IF 4.8 4区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Journal of Semiconductors Pub Date : 2023-12-01 DOI:10.1088/1674-4926/44/12/122501

Chuanpeng Jiang, Jinhao Li, Hongchao Zhang, Shiyang Lu, Pengbin Li, Chao Wang, Zhongkui Zhang, Zhengyi Hou, Xu Liu, Jiagao Feng, He Zhang, Hui Jin, Gefei Wang, Hongxi Liu, Kaihua Cao, Zhaohao Wang, Weisheng Zhao

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引用次数: 0

Abstract

We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX array exhibits an in-die function yield of over 99.6%. Additionally, it provides a sufficient readout window, with a TMR/R _P_sigma% value of 21.4. Moreover, the SOT magnetic tunnel junctions (MTJs) in the array show write error rates as low as 10⁻⁶ without any ballooning effects or back-hopping behaviors, ensuring the write stability and reliability. This array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from −40 to 125 °C. Overall, the demonstrated array shows competitive specifications compared to the state-of-the-art works. Our work paves the way for the industrial-scale production of SOT-MRAM, moving this technology beyond R&D and towards widespread adoption.

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面向工业应用的可制造 SOT-MRAM 多路复用器阵列演示

我们成功地展示了一个 1 Kb 的自旋轨道力矩（SOT）磁性随机存取存储器（MRAM）多路复用器（MUX）阵列，其性能卓越。1 Kb MUX 阵列的片内功能良率超过 99.6%。此外，它还提供了足够的读出窗口，TMR/RP_sigma% 值为 21.4。此外，该阵列中的 SOT 磁隧道结 (MTJ) 显示出低至 10-6 的写入错误率，没有任何气球效应或跳回行为，确保了写入稳定性和可靠性。该阵列可在 -40 至 125 °C 的工业级温度范围内实现 20 ns 和 1.2 V 的写入操作。总体而言，与最先进的作品相比，所展示的阵列在规格上具有竞争力。我们的工作为 SOT-MRAM 的工业规模生产铺平了道路，使这项技术超越了研发阶段，走向广泛应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Semiconductors PHYSICS, CONDENSED MATTER-

CiteScore

6.70

自引率

9.80%

发文量

119

期刊介绍： Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.