Wafer-to-wafer hybrid bonding at 400-nm interconnect pitch

Soon Aik Chew, Joeri De Vos, Eric Beyne
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Abstract

Wafer-to-wafer hybrid bonding is an attractive 3D integration technology for stacking multiple heterogeneous chips with high 3D interconnect density. We highlight recent design and technology innovations that enable hybrid Cu, SiCN-to-Cu and SiCN bonding with interconnect pitches down to an unprecedented 400 nm.
以 400 纳米互连间距实现晶圆到晶圆混合键合
晶圆到晶圆混合键合是一种极具吸引力的三维集成技术,可用于堆叠具有高三维互连密度的多个异构芯片。我们重点介绍最近的设计和技术创新,这些创新实现了铜、SiCN-to-Cu 和 SiCN 混合键合,互连间距达到前所未有的 400 nm。
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