Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L-BTBT induced GIDL

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Anchal Thakur, Rohit Dhiman, Girish Wadhwa, Sheetal Bhandari
{"title":"Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L-BTBT induced GIDL","authors":"Anchal Thakur,&nbsp;Rohit Dhiman,&nbsp;Girish Wadhwa,&nbsp;Sheetal Bhandari","doi":"10.1002/jnm.3217","DOIUrl":null,"url":null,"abstract":"<p>In the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dimensional parameters such as the nanotube thickness, core and outer gates thickness and gate electrode work function shows the significant impact on the band to band tunneling in lateral direction (L-BTBT) which induced GIDL current. It is analyzed that increase in the nanotube thickness and physical oxide thickness increase the GIDL current, while increasing the gate electrode work function, core gate and outer gate thicknesses gives reduced GIDL current. The SiGe <b>S</b>/D NTJLFET produce a remarkable high <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio ~ 10<sup>11</sup>. A compact model for GIDL current is also developed which shows the dependency of structure parameters on leakage current. The SiGe has been incorporated as source and drain in NTJLFET which creates the energy band discontinuity. Furthermore, SiGe S/D NTJLFET is fairly compared with the conventional NT JLFET and nanowire (NW) JLFET and shows an improved performance.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 2","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3217","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In the present work, we investigate the impact of structure dimensional parameters on the short channel effects which occurs especially below 20 nm regime particularly gate induced drain leakage (GIDL) current. Using technology computer aided design simulation (TCAD), we have examined the GIDL for SiGe as source/drain in NTJLFET. The structural dimensional parameters such as the nanotube thickness, core and outer gates thickness and gate electrode work function shows the significant impact on the band to band tunneling in lateral direction (L-BTBT) which induced GIDL current. It is analyzed that increase in the nanotube thickness and physical oxide thickness increase the GIDL current, while increasing the gate electrode work function, core gate and outer gate thicknesses gives reduced GIDL current. The SiGe S/D NTJLFET produce a remarkable high ION/IOFF ratio ~ 1011. A compact model for GIDL current is also developed which shows the dependency of structure parameters on leakage current. The SiGe has been incorporated as source and drain in NTJLFET which creates the energy band discontinuity. Furthermore, SiGe S/D NTJLFET is fairly compared with the conventional NT JLFET and nanowire (NW) JLFET and shows an improved performance.

利用分析建模优化 SiGe S/D NT JLFET 参数,改善 L-BTBT 诱导的 GIDL
在本研究中,我们研究了结构尺寸参数对短沟道效应的影响,尤其是 20 纳米以下的短沟道效应,特别是栅极漏极漏电流(GIDL)。我们利用技术计算机辅助设计仿真(TCAD),研究了锗硅作为 NTJLFET 源极/漏极的 GIDL。纳米管厚度、内核和外栅厚度以及栅电极功函数等结构尺寸参数对横向带隧穿(L-BTBT)有显著影响,而横向带隧穿会诱发 GIDL 电流。分析表明,增加纳米管厚度和物理氧化物厚度会增加 GIDL 电流,而增加栅极电极功函数、核心栅极和外栅极厚度则会降低 GIDL 电流。SiGe S/D NTJLFET 能产生高达 1011 的离子/离子交换比。此外,还开发了一个 GIDL 电流的紧凑模型,该模型显示了结构参数对泄漏电流的依赖性。在 NTJLFET 中,硅锗被用作源极和漏极,从而产生了能带不连续性。此外,将 SiGe S/D NTJLFET 与传统的 NT JLFET 和纳米线 (NW) JLFET 进行了比较,结果表明 SiGe S/D NTJLFET 的性能有所提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
4.60
自引率
6.20%
发文量
101
审稿时长
>12 weeks
期刊介绍: Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信