Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2024-02-05 DOI:10.1007/s13391-024-00487-y

Irang Lim, Youjin Koo, Woong Choi

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Abstract

We report the enhanced thickness uniformity of chemical-vapor-deposited MoS₂ thin films on SiO₂ substrates through substrate pre-treatment with O₂ plasma. Contact angle measurements indicated that the SiO₂ surface became more hydrophilic with an increase in surface energy after O₂ plasma pre-treatment. Analysis through Raman spectra and transmission electron microscopy measurements revealed that the thickness uniformity of MoS₂ thin films improved over a centimeter scale after the O₂ plasma pre-treatment on SiO₂ substrates. Atomic force microscopy analysis further revealed that O₂ plasma pre-treatment on SiO₂ substrates improved the uniformity of surface roughness in the MoS₂ thin films. These results demonstrate that O₂ plasma pre-treatment on SiO₂ substrates is an effective method of enhancing the thickness uniformity of MoS₂ thin films, providing valuable insights for the advancement of large-scale synthesis of MoS₂ and related transition metal dichalcogenides.

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通过氧等离子体预处理提高二氧化硅/硅基片上 MoS2 薄膜的厚度均匀性

摘要我们报告了通过在二氧化硅基底上进行 O2 等离子体预处理，化学气相沉积 MoS2 薄膜的厚度均匀性得到增强的情况。接触角测量结果表明，经过 O2 等离子体预处理后，随着表面能的增加，SiO2 表面变得更加亲水。拉曼光谱和透射电子显微镜测量分析表明，在二氧化硅基底上进行 O2 等离子体预处理后，MoS2 薄膜的厚度均匀性提高了一厘米以上。原子力显微镜分析进一步显示，在二氧化硅基底上进行 O2 等离子体预处理后，MoS2 薄膜表面粗糙度的均匀性得到改善。这些结果表明，在二氧化硅基底上进行 O2 等离子体预处理是提高 MoS2 薄膜厚度均匀性的有效方法，为推动 MoS2 及相关过渡金属二钙化物的大规模合成提供了宝贵的见解。图表摘要

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.