Ather Mahmood, Jamie L. Weaver, Syed Qamar Abbas Shah, Will Echtenkamp, Jeffrey W. Lynn, Peter A. Dowben, Christian Binek
{"title":"Post Deposition Interfacial Néel Temperature Tuning in Magnetoelectric B:Cr2O3 (Adv. Phys. Res. 1/2024)","authors":"Ather Mahmood, Jamie L. Weaver, Syed Qamar Abbas Shah, Will Echtenkamp, Jeffrey W. Lynn, Peter A. Dowben, Christian Binek","doi":"10.1002/apxr.202470001","DOIUrl":null,"url":null,"abstract":"<p><b>Antiferromagnetic Spintronics</b></p><p>Energy efficient and fast, non-volatile memory is the apogee of antiferromagnetic spintronics. The cover page shows a device which utilizes an antiferromagnetic, B-doped thin film of magnetoelectric Cr<sub>2</sub>O<sub>3</sub>. Voltage applied across the film controls its Néel vector and state variable. To facilitate high temperature operation, the Néel temperature, <i>T</i><sub>N</sub>, of B:Cr<sub>2</sub>O<sub>3</sub> is tuned. In article 2300061 by Ather Mahmood, Christian Binek, and colleagues, cold neutron and x-ray photoemission (XPS) data show that annealing leads to interfacial B-accumulation and <i>T</i><sub>N</sub> increase. Neutron and XPS depth profiling map the depth dependent B-concentration.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":100035,"journal":{"name":"Advanced Physics Research","volume":"3 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/apxr.202470001","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Physics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/apxr.202470001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Antiferromagnetic Spintronics
Energy efficient and fast, non-volatile memory is the apogee of antiferromagnetic spintronics. The cover page shows a device which utilizes an antiferromagnetic, B-doped thin film of magnetoelectric Cr2O3. Voltage applied across the film controls its Néel vector and state variable. To facilitate high temperature operation, the Néel temperature, TN, of B:Cr2O3 is tuned. In article 2300061 by Ather Mahmood, Christian Binek, and colleagues, cold neutron and x-ray photoemission (XPS) data show that annealing leads to interfacial B-accumulation and TN increase. Neutron and XPS depth profiling map the depth dependent B-concentration.
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