Self-Powered Fast Response X-Ray Detector Based on Vertical p-NiO/Ga2O3 Heterojunction Diode

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2024-01-01 DOI:10.1109/LPT.2023.3348869

Silong Zhang;Yuxin Deng;Liang Chen;Leidang Zhou;Xing Lu;Fangbao Wang;Xue Du;Yang Li;Shiyi He;Xiaoping Ouyang

{"title":"Self-Powered Fast Response X-Ray Detector Based on Vertical p-NiO/Ga2O3 Heterojunction Diode","authors":"Silong Zhang;Yuxin Deng;Liang Chen;Leidang Zhou;Xing Lu;Fangbao Wang;Xue Du;Yang Li;Shiyi He;Xiaoping Ouyang","doi":"10.1109/LPT.2023.3348869","DOIUrl":null,"url":null,"abstract":"Ga2O3, as an ultra-wide band gap material with physical properties such as large atomic number, low intrinsic carrier density, and high irradiation tolerance, has shown great potential in X-ray detection. This letter reports a self-powered X-ray detector based on vertical p-NiO/Ga2O3 heterojunction diodes (HJDs). Benefiting from the high quality and high built-in potential of the p-n heterojunction, the HJD detector exhibited a pronounced photovoltaic response to X-rays at 0 V with a sensitivity of 212 nC\n<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>\nGy\n<inline-formula> <tex-math>$^{-1}\\cdot $ </tex-math></inline-formula>\ncm−2 and a fast response time of less than 0.02 s in transient X-ray response measurements, which was much faster than that of the reported Ga2O3 Schottky barrier diode (SBD) detector. The power-voltage (P-V) test indicated that the device conformed to typical photovoltaic characteristics with a maximum output power of 2.95 nW. Moreover, the HJD detector showed a good linear property to various X-ray dose rates from 0.0383 Gy\n<inline-formula> <tex-math>$\\cdot \\text{s}^{-1}$ </tex-math></inline-formula>\n to 1.149 Gy\n<inline-formula> <tex-math>$\\cdot \\text{s}^{-1}$ </tex-math></inline-formula>\n.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":null,"pages":null},"PeriodicalIF":2.3000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10379179/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Ga2O3, as an ultra-wide band gap material with physical properties such as large atomic number, low intrinsic carrier density, and high irradiation tolerance, has shown great potential in X-ray detection. This letter reports a self-powered X-ray detector based on vertical p-NiO/Ga2O3 heterojunction diodes (HJDs). Benefiting from the high quality and high built-in potential of the p-n heterojunction, the HJD detector exhibited a pronounced photovoltaic response to X-rays at 0 V with a sensitivity of 212 nC

$\cdot $

$^{-1}\cdot $

cm−2 and a fast response time of less than 0.02 s in transient X-ray response measurements, which was much faster than that of the reported Ga2O3 Schottky barrier diode (SBD) detector. The power-voltage (P-V) test indicated that the device conformed to typical photovoltaic characteristics with a maximum output power of 2.95 nW. Moreover, the HJD detector showed a good linear property to various X-ray dose rates from 0.0383 Gy

$\cdot \text{s}^{-1}$

to 1.149 Gy

$\cdot \text{s}^{-1}$

查看原文本刊更多论文

基于垂直 p-NiO/Ga2O3 异质结二极管的自供电快速响应 X 射线探测器

Ga2O3 作为一种超宽带隙材料，具有原子序数大、本征载流子密度低、耐辐照能力强等物理特性，在 X 射线探测方面显示出巨大的潜力。这封信报告了一种基于垂直 p-NiO/Ga2O3 异质结二极管（HJD）的自供电 X 射线探测器。得益于 p-n 异质结的高质量和高内置电位，HJD 探测器在 0 V 电压下对 X 射线有明显的光电响应，灵敏度为 212 nC $\cdot $ Gy $^{-1}\cdot $ cm-2，在瞬态 X 射线响应测量中的快速响应时间小于 0.02 s，比已报道的 Ga2O3 肖特基势垒二极管（SBD）探测器快得多。功率-电压（P-V）测试表明，该器件符合典型的光伏特性，最大输出功率为 2.95 nW。此外，HJD 探测器对从 0.0383 Gy $\cdot \text{s}^{-1}$ 到 1.149 Gy $\cdot \text{s}^{-1}$ 的各种 X 射线剂量率都表现出良好的线性特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.