How to improve the structural stabilities of halide perovskite quantum dots: review of various strategies to enhance the structural stabilities of halide perovskite quantum dots

IF 13.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Dokyum Kim, Taesun Yun, Sangmin An, Chang-Lyoul Lee
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Abstract

Halide perovskites have emerged as promising materials for various optoelectronic devices because of their excellent optical and electrical properties. In particular, halide perovskite quantum dots (PQDs) have garnered considerable attention as emissive materials for light-emitting diodes (LEDs) because of their higher color purities and photoluminescence quantum yields compared to conventional inorganic quantum dots (CdSe, ZnSe, ZnS, etc.). However, PQDs exhibit poor structural stabilities in response to external stimuli (moisture, heat, etc.) owing to their inherent ionic nature. This review presents recent research trends and insights into improving the structural stabilities of PQDs. In addition, the origins of the poor structural stabilities of PQDs and various methods to overcome this drawback are discussed. The structural degradation of PQDs is mainly caused by two mechanisms: (1) defect formation on the surface of the PQDs by ligand dissociation (i.e., detachment of weakly bound ligands from the surface of PQDs), and (2) vacancy formation by halide migration in the lattices of the PQDs due to the low migration energy of halide ions. The structural stabilities of PQDs can be improved through four methods: (1) ligand modification, (2) core–shell structure, (3) crosslinking, and (4) metal doping, all of which are presented in detail herein. This review provides a comprehensive understanding of the structural stabilities and opto-electrical properties of PQDs and is expected to contribute to future research on improving the device performance of perovskite quantum dot LEDs (PeLEDs).

如何提高卤化物包晶量子点的结构稳定性:综述提高卤化物包晶量子点结构稳定性的各种策略。
卤化物过氧化物因其优异的光学和电学特性,已成为各种光电器件的理想材料。特别是卤化物包晶量子点(PQDs),与传统的无机量子点(CdSe、ZnSe、ZnS 等)相比,具有更高的色纯度和光致发光量子产率,因此作为发光二极管(LEDs)的发光材料备受关注。然而,由于其固有的离子性质,PQDs 在受到外部刺激(潮湿、高温等)时表现出很差的结构稳定性。本综述介绍了提高 PQDs 结构稳定性的最新研究趋势和见解。此外,还讨论了 PQDs 结构稳定性差的原因以及克服这一缺点的各种方法。PQDs 结构退化主要由两种机制引起:(1) 配体解离(即弱结合配体从 PQDs 表面脱离)在 PQDs 表面形成缺陷;(2) 由于卤离子迁移能较低,卤化物在 PQDs 晶格中迁移形成空位。PQDs 的结构稳定性可以通过四种方法得到改善:(1) 配体修饰;(2) 核壳结构;(3) 交联;(4) 金属掺杂。本综述提供了对 PQDs 结构稳定性和光电特性的全面了解,预计将有助于未来提高包晶体量子点 LED(PeLED)器件性能的研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Nano Convergence
Nano Convergence Engineering-General Engineering
CiteScore
15.90
自引率
2.60%
发文量
50
审稿时长
13 weeks
期刊介绍: Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects. Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.
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