Orazio Muscato, Giovanni Nastasi, Vittorio Romano, Giorgia Vitanza
{"title":"Optimized quantum drift diffusion model for a resonant tunneling diode","authors":"Orazio Muscato, Giovanni Nastasi, Vittorio Romano, Giorgia Vitanza","doi":"10.1515/jnet-2023-0059","DOIUrl":null,"url":null,"abstract":"The main aim of this work is to optimize a Quantum Drift Diffusion model (QDD) (V. Romano, M. Torrisi, and R. Tracinà, “Approximate solutions to the quantum drift-diffusion model of semiconductors,” <jats:italic>J. Math. Phys.</jats:italic>, vol. 48, p. 023501, 2007; A. El Ayyadi and A. Jüngel, “Semiconductor simulations using a coupled quantum drift-diffusion schrödinger-Poisson model,” <jats:italic>SIAM J. Appl. Math.</jats:italic>, vol. 66, no. 2, pp. 554–572, 2005; L. Barletti and C. Cintolesi, “Derivation of isothermal quantum fluid equations with Fermi-Dirac and bose-einstein statistics,” <jats:italic>J. Stat. Phys.</jats:italic>, vol. 148, pp. 353–386, 2012) by comparing it with the Boltzmann-Wigner Transport Equation (BWTE) (O. Muscato, “Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode,” <jats:italic>J. Comput. Electron</jats:italic>., vol. 20, pp. 2062–2069, 2021) solved using a signed Monte Carlo method (M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. K. Ferry, “Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices,” <jats:italic>Phys. Rev. B</jats:italic>, vol. 70, pp. 115–319, 2004). A situation of high non equilibrium regime is investigated: electron transport in a Resonant Tunneling Diode (RTD) made of GaAs with two potential barriers in GaAlAs. The range of the suitable voltage bias applied to the RTD is analyzed. We find an acceptable agreement between QDD model and BWTE when the applied bias is low or moderate with a threshold of about 0.225 V over a length of 150 nm; it is found out that the use of a field dependent mobility is crucial for getting a good description of the negative differential conductivity in such a range. At higher bias voltages, we expect that QDD model loses accuracy.","PeriodicalId":16428,"journal":{"name":"Journal of Non-Equilibrium Thermodynamics","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Non-Equilibrium Thermodynamics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1515/jnet-2023-0059","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MECHANICS","Score":null,"Total":0}
引用次数: 0
Abstract
The main aim of this work is to optimize a Quantum Drift Diffusion model (QDD) (V. Romano, M. Torrisi, and R. Tracinà, “Approximate solutions to the quantum drift-diffusion model of semiconductors,” J. Math. Phys., vol. 48, p. 023501, 2007; A. El Ayyadi and A. Jüngel, “Semiconductor simulations using a coupled quantum drift-diffusion schrödinger-Poisson model,” SIAM J. Appl. Math., vol. 66, no. 2, pp. 554–572, 2005; L. Barletti and C. Cintolesi, “Derivation of isothermal quantum fluid equations with Fermi-Dirac and bose-einstein statistics,” J. Stat. Phys., vol. 148, pp. 353–386, 2012) by comparing it with the Boltzmann-Wigner Transport Equation (BWTE) (O. Muscato, “Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode,” J. Comput. Electron., vol. 20, pp. 2062–2069, 2021) solved using a signed Monte Carlo method (M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. K. Ferry, “Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices,” Phys. Rev. B, vol. 70, pp. 115–319, 2004). A situation of high non equilibrium regime is investigated: electron transport in a Resonant Tunneling Diode (RTD) made of GaAs with two potential barriers in GaAlAs. The range of the suitable voltage bias applied to the RTD is analyzed. We find an acceptable agreement between QDD model and BWTE when the applied bias is low or moderate with a threshold of about 0.225 V over a length of 150 nm; it is found out that the use of a field dependent mobility is crucial for getting a good description of the negative differential conductivity in such a range. At higher bias voltages, we expect that QDD model loses accuracy.
这项工作的主要目的是优化量子漂移扩散模型(QDD)(V. Romano, M. Torrisi, and R. Tracinà, "Approximate solutions to the quantum drift-diffusion model of semiconductors," J. Math. Phys.48, p. 023501, 2007; A. El Ayyadi and A. Jüngel, "Semiconductor simulations using a coupled quantum drift-diffusion schrödinger-Poisson model," SIAM J. Appl.物理》,第 148 卷,第 353-386 页,2012 年)与玻尔兹曼-维格纳输运方程(BWTE)(O. Muscato,"Wigner ensemble Monte Carlo simulation without splitting error of a GaAs resonant tunneling diode," J. Comput.电子学》,第 20 卷,第 2062-2069 页,2021 年)使用签名蒙特卡罗方法求解(M. Nedjalkov、H. Kosina、S. Selberherr、C. Ringhofer 和 D. K. Ferry,《小型半导体器件中维格纳-玻尔兹曼传输的统一粒子方法》,《物理评论 B》,第 70 卷,第 115-319 页,2004 年)。研究了一种高非平衡态情况:由砷化镓(GaAs)制成的共振隧道二极管(RTD)中的电子传输,其中有两个砷化镓势垒。分析了应用于 RTD 的合适电压偏置范围。我们发现,当施加的偏压较低或适中时,QDD 模型与 BWTE 之间的一致性可以接受,阈值约为 0.225 V,长度为 150 nm。在更高的偏置电压下,我们预计 QDD 模型会失去准确性。
期刊介绍:
The Journal of Non-Equilibrium Thermodynamics serves as an international publication organ for new ideas, insights and results on non-equilibrium phenomena in science, engineering and related natural systems. The central aim of the journal is to provide a bridge between science and engineering and to promote scientific exchange on a) newly observed non-equilibrium phenomena, b) analytic or numeric modeling for their interpretation, c) vanguard methods to describe non-equilibrium phenomena.
Contributions should – among others – present novel approaches to analyzing, modeling and optimizing processes of engineering relevance such as transport processes of mass, momentum and energy, separation of fluid phases, reproduction of living cells, or energy conversion. The journal is particularly interested in contributions which add to the basic understanding of non-equilibrium phenomena in science and engineering, with systems of interest ranging from the macro- to the nano-level.
The Journal of Non-Equilibrium Thermodynamics has recently expanded its scope to place new emphasis on theoretical and experimental investigations of non-equilibrium phenomena in thermophysical, chemical, biochemical and abstract model systems of engineering relevance. We are therefore pleased to invite submissions which present newly observed non-equilibrium phenomena, analytic or fuzzy models for their interpretation, or new methods for their description.