Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization

Sara Ghomi, A. Lamperti, M. Alia, C. Casari, C. Grazianetti, A. Molle, C. Martella
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Abstract

Developing a method for the growth of ultrathin metal chalcogenides, potentially targeting the two-dimensional (2D) limit, has a pivotal impact on various nanotechnological device applications. Here, we employed a vapor deposition scheme, based on tellurization, to induce the heterogenous chemical reaction between solid Ag and Au precursors, in the form of ultrathin films, and Te vapors. We characterized the morphological and structural properties of the grown tellurides by using atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction techniques. The developed tellurization methodology provides a key advancement in the picture of growing ultrathin noble metal tellurides and holds great potential for applications in different technological fields.
通过化学气相碲化大面积生长碲银和碲金超薄薄膜
开发一种可能达到二维(2D)极限的超薄金属铬化物生长方法,对各种纳米技术设备的应用有着举足轻重的影响。在此,我们采用了一种基于碲化的气相沉积方案,以超薄薄膜的形式诱导固体银和金前体与碲蒸气之间的异质化学反应。我们利用原子力显微镜、拉曼光谱、X 射线光电子能谱和 X 射线衍射技术对生长出的碲化物的形态和结构特性进行了表征。所开发的碲化方法为超薄贵金属碲化物的生长提供了一个关键进展,在不同技术领域具有巨大的应用潜力。
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