Insights into synaptic functionality and resistive switching in lead iodide flexible memristor devices†

IF 6.6 2区 材料科学 Q1 CHEMISTRY, PHYSICAL
Muskan Jain, Mayur Jagdishbhai Patel, Lingli Liu, Jeny Gosai, Manish Khemnani, Himangshu Jyoti Gogoi, Mun Yin Chee, Antonio Guerrero, Wen Siang Lew and Ankur Solanki
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Abstract

Neuromorphic platforms are gaining popularity due to their superior efficiency, low power consumption, and adaptable parallel signal processing capabilities, overcoming the limitations of traditional von Neumann architecture. We conduct an in-depth investigation into the factors influencing the resistive switching mechanism in memristor devices utilizing lead iodide (PbI2). We establish correlations between device performance and morphological features, unveiling synaptic like behaviour of device making it suitable for range of flexible neuromorphic applications. Notably, a highly reliable unipolar switching mechanism is identified, exhibiting stability even under mechanical strain (with a bending radius of approximately 4 mm) and in high humidity environment (at 75% relative humidity) without the need for encapsulation. The investigation delves into the complex interplay of charge transport, ion migration and the active interface, elucidating the factors contributing to the remarkable resistive switching observed in PbI2-based memristors. The detailed findings highlight synaptic behaviors akin to the modulation of synaptic strengths, with an impressive potentiation and depression of 2 × 104 cycles, emphasizing the role of spike time-dependent plasticity (STDP). The flexible platform demonstrates exceptional performance, achieving a simulated accuracy rate of 95.06% in recognizing modified patterns from the National Institute of Standards and Technology (MNIST) dataset with just 30 training epochs. Ultimately, this research underscores the potential of PbI2-based flexible memristor devices as versatile component for neuromorphic computing. Moreover, it demonstrate the robustness of PbI2 memristors in terms of their resistive switching capabilities, showcasing resilience both mechanically and electrically. This underscores their potential in replicating synaptic functions for advanced information processing systems.

Abstract Image

对碘化铅柔性晶膜管器件的突触功能和电阻开关的深入了解
神经形态平台克服了传统冯-诺依曼架构的局限性,具有效率高、功耗低和适应性强的并行信号处理能力,因此越来越受到人们的青睐。我们对基于碘化铅(PbI2)的忆阻器器件电阻开关机制的决定因素进行了全面探索。我们在器件性能和形态特征之间建立了错综复杂的联系,进而揭示了器件的突触行为,使其适用于一系列灵活的应用。 值得注意的是,我们发现了一种高度可靠的单极开关机制,即使在机械应变(弯曲半径约为 4 毫米)和高湿度环境(相对湿度为 75%)下也能保持稳定,无需封装。研究深入探讨了电荷传输和活性界面之间复杂的相互作用,阐明了在基于 PbI2 的忆阻器中观察到的显著电阻开关的促成因素。详细的研究结果突显了类似于突触强度调制的突触行为,达到了令人印象深刻的 2 x 104 个周期,强调了尖峰时间相关可塑性(STDP)的作用。灵活的平台表现出卓越的性能,在识别美国国家标准与技术研究院(MNIST)数据集中的修改模式时,仅用了 30 个训练历时,模拟准确率就达到了 95.06%。最终,这项研究强调了基于 PbI2 的柔性忆阻器器件作为神经形态计算多功能组件的潜力。此外,它还强调了PbI2忆阻器在机械和电气方面的电阻开关能力,突出了它们在先进信息处理系统中模拟突触功能的前景。
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来源期刊
Nanoscale Horizons
Nanoscale Horizons Materials Science-General Materials Science
CiteScore
16.30
自引率
1.00%
发文量
141
期刊介绍: Nanoscale Horizons stands out as a premier journal for publishing exceptionally high-quality and innovative nanoscience and nanotechnology. The emphasis lies on original research that introduces a new concept or a novel perspective (a conceptual advance), prioritizing this over reporting technological improvements. Nevertheless, outstanding articles showcasing truly groundbreaking developments, including record-breaking performance, may also find a place in the journal. Published work must be of substantial general interest to our broad and diverse readership across the nanoscience and nanotechnology community.
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