n-Si/SiOx/CoOx-Mo Photoanode for Efficient Photoelectrochemical Water Oxidation (Small 3/2024)

IF 13 2区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Small Pub Date : 2024-01-18 DOI:10.1002/smll.202470026

Shuyang Peng, Di Liu, Keyu An, Zhiqin Ying, Mingpeng Chen, Jinxian Feng, Kin Ho Lo, Hui Pan

引用次数: 0

Abstract

Photoelectrochemical Water Oxidation

In article number 2304376, Kin Ho Lo, Hui Pan, and co-workers report a metal-insulator-semiconductor (MIS) structure photoanode (n-Si/SiO_x/CoO_x-Mo) to show a high photovoltage of 650 mV, saturation current density of 27.6 mA cm⁻², and fill factor of 0.62 in 1.0 M K₃BO₃ because the energy barrier, charge transfer, reaction kinetics, and active sites are dramatically increased by the Mo-incorporation. And the Mo-incorporated photoanode is also highly stable.

Abstract Image

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用于高效光电化学水氧化的 n-Si/SiOx/CoOx-Mo 光阳极（第 3/2024 号小论文）

光电化学水氧化在文章编号 2304376 中，Kin Ho Lo、Hui Pan 及其合作者报告了一种金属绝缘体-半导体（MIS）结构光阳极（n-Si/SiOx/CoOx-Mo），由于掺入 Mo，其在 1.0 M K3BO3 中的能垒、电荷转移、反应动力学和活性位点均显著增加，因此光阳极的光电电压高达 650 mV，饱和电流密度为 27.6 mA cm-2，填充因子为 0.62。此外，掺入钼的光阳极还具有很高的稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Small 工程技术-材料科学：综合

CiteScore

17.70

自引率

3.80%

发文量

1830

审稿时长

2.1 months

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