E. Bozdogan, M. Alper, M. C. Haciismailoglu, N. Erdogan
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引用次数: 0
Abstract
The n- type silicon nanowires with vertically aligned different lengths and diameters were produced from the commercial n-type silicon wafers with \(\left\langle {100} \right\rangle \) orientation using the metal assisted chemical etching method. Then, in order to fabricate p-type cuprous oxide/n-type silicon nanowire heterojunctions, the p‑type cuprous oxide thin films were electrodeposited on the produced n-silicon nanowires. The X-ray diffraction patterns revealed that both the n-type silicon nanowires and p-type cuprous oxide/n-type silicon nanowire heterojunctions have cubic structure with a single phase. The cross-section field emission scanning electron microscopy images clearly showed the formation of the nanowires that have different lengths and diameters changing with the etching time. The optical characterizations by ultraviolet-visible-near infrared region spectrometry indicated that the reflectivity values of silicon nanowires and p-cuprous oxide/n-type silicon nanowire heterojunctions are much lower that of n-type silicon wafer. In addition, the diode performances of the heterojunctions were determined by current–voltage measurements and their ideality factors were found to be changed considerably depending on the structure of nanowires.
电沉积在具有 $\left\langle {100} （right\rangle $$ 取向的硅纳米线上的 p 型氧化亚铜薄膜
摘要 利用金属辅助化学蚀刻法，从取向为（左角{100}右角{100}）的商用n型硅晶片上制备出垂直排列的不同长度和直径的n型硅纳米线。然后，为了制备 p 型氧化亚铜/n 型硅纳米线异质结，在制备的 n 型硅纳米线上电沉积了 p 型氧化亚铜薄膜。X 射线衍射图样显示，n 型硅纳米线和 p 型氧化亚铜/n 型硅纳米线异质结都具有单相立方结构。横截面场发射扫描电子显微镜图像清楚地显示了纳米线的形成，其长度和直径随蚀刻时间的变化而变化。紫外-可见-近红外光谱的光学表征表明，硅纳米线和 p 型氧化物/n 型硅纳米线异质结的反射率远低于 n 型硅晶片。此外，还通过电流-电压测量测定了异质结的二极管性能，发现其理想度系数随纳米线结构的不同而有很大变化。
期刊介绍：
Russian Journal of Electrochemistry is a journal that covers all aspects of research in modern electrochemistry. The journal welcomes submissions in English or Russian regardless of country and nationality of authors.
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