Preparation of nanostructured cuprous oxide (Cu2O) absorber layer for photovoltaic application

IF 1.5 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Rabiul Awal, Nilufer Yesmin Tanisa, Md. Arifur Rahman, Shamim Ahmed
{"title":"Preparation of nanostructured cuprous oxide (Cu2O) absorber layer for photovoltaic application","authors":"Rabiul Awal,&nbsp;Nilufer Yesmin Tanisa,&nbsp;Md. Arifur Rahman,&nbsp;Shamim Ahmed","doi":"10.1049/mna2.12188","DOIUrl":null,"url":null,"abstract":"<p>In this investigation, a nanostructured Cu<sub>2</sub>O thin film absorber layer is electrodeposited, exploring the impact of varying negative applied voltages and deposition time. Notably, the Cu<sub>2</sub>O thin film demonstrated optimal absorbance at −0.95 V, contrasting sharply with a minimum at −0.97 V. The authors' findings underscore that the peak absorbance was achieved at −0.95 V, coinciding with the lowest transmittance observed after 80 min of deposition, aligning with a maximal absorption coefficient of 21 × 10<sup>3</sup> cm<sup>−1</sup>. At a deposition time of 5 min, the Cu<sub>2</sub>O thin film exhibited a noteworthy maximum Urbach energy of 2.00 eV and a minimum steepness parameter of 0.013. In contrast, the lowest Urbach energy was recorded at 0.34 eV, with the highest steepness parameter occurring at an applied voltage of 0.93 V. Furthermore, this study revealed a gradual increase in the refractive index with higher applied voltages, reaching its pinnacle at −1.5 V. These results collectively emphasize the nuanced interplay between applied voltage, deposition time and the optical properties of the nanostructured Cu<sub>2</sub>O thin film. The observed trends hold significant implications for optimizing the performance of thin film absorber layers, particularly in the context of enhancing absorbance and tailoring optical characteristics for specific applications.</p>","PeriodicalId":18398,"journal":{"name":"Micro & Nano Letters","volume":"19 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/mna2.12188","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro & Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/mna2.12188","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

In this investigation, a nanostructured Cu2O thin film absorber layer is electrodeposited, exploring the impact of varying negative applied voltages and deposition time. Notably, the Cu2O thin film demonstrated optimal absorbance at −0.95 V, contrasting sharply with a minimum at −0.97 V. The authors' findings underscore that the peak absorbance was achieved at −0.95 V, coinciding with the lowest transmittance observed after 80 min of deposition, aligning with a maximal absorption coefficient of 21 × 103 cm−1. At a deposition time of 5 min, the Cu2O thin film exhibited a noteworthy maximum Urbach energy of 2.00 eV and a minimum steepness parameter of 0.013. In contrast, the lowest Urbach energy was recorded at 0.34 eV, with the highest steepness parameter occurring at an applied voltage of 0.93 V. Furthermore, this study revealed a gradual increase in the refractive index with higher applied voltages, reaching its pinnacle at −1.5 V. These results collectively emphasize the nuanced interplay between applied voltage, deposition time and the optical properties of the nanostructured Cu2O thin film. The observed trends hold significant implications for optimizing the performance of thin film absorber layers, particularly in the context of enhancing absorbance and tailoring optical characteristics for specific applications.

Abstract Image

制备用于光伏应用的纳米结构氧化亚铜(Cu2O)吸收层
在这项研究中,电沉积了纳米结构的 Cu2O 薄膜吸收层,探讨了不同负电压和沉积时间的影响。值得注意的是,Cu2O 薄膜在 -0.95 V 时显示出最佳吸光度,与 -0.97 V 时的最低吸光度形成鲜明对比。作者的研究结果强调,吸光度峰值出现在 -0.95 V,与沉积 80 分钟后观察到的最低透射率相吻合,与 21 × 103 cm-1 的最大吸收系数相一致。沉积时间为 5 分钟时,Cu2O 薄膜显示出值得注意的 2.00 eV 最大乌巴赫能和 0.013 最小陡度参数。相反,最低的乌巴赫能为 0.34 eV,最高的陡度参数出现在 0.93 V 的施加电压下。此外,这项研究还发现,折射率随着施加电压的升高而逐渐增加,在-1.5 V时达到顶峰。这些结果共同强调了施加电压、沉积时间和纳米结构 Cu2O 薄膜光学特性之间微妙的相互作用。观察到的趋势对优化薄膜吸收层的性能具有重要意义,特别是在提高吸收率和为特定应用定制光学特性方面。
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来源期刊
Micro & Nano Letters
Micro & Nano Letters 工程技术-材料科学:综合
CiteScore
3.30
自引率
0.00%
发文量
58
审稿时长
2.8 months
期刊介绍: Micro & Nano Letters offers express online publication of short research papers containing the latest advances in miniature and ultraminiature structures and systems. With an average of six weeks to decision, and publication online in advance of each issue, Micro & Nano Letters offers a rapid route for the international dissemination of high quality research findings from both the micro and nano communities. Scope Micro & Nano Letters offers express online publication of short research papers containing the latest advances in micro and nano-scale science, engineering and technology, with at least one dimension ranging from micrometers to nanometers. Micro & Nano Letters offers readers high-quality original research from both the micro and nano communities, and the materials and devices communities. Bridging this gap between materials science and micro and nano-scale devices, Micro & Nano Letters addresses issues in the disciplines of engineering, physical, chemical, and biological science. It places particular emphasis on cross-disciplinary activities and applications. Typical topics include: Micro and nanostructures for the device communities MEMS and NEMS Modelling, simulation and realisation of micro and nanoscale structures, devices and systems, with comparisons to experimental data Synthesis and processing Micro and nano-photonics Molecular machines, circuits and self-assembly Organic and inorganic micro and nanostructures Micro and nano-fluidics
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