Analysis and simulation of the in-situ time-resolved reflectivity recorded during the growth of GaN on GaAs (110) substrate

IF 1.1 4区工程技术 Q4 OPTICS

Optical Engineering Pub Date : 2024-01-11 DOI:10.1117/1.oe.63.1.014104

Safa Othmani, Imen Daldoul, Noureddine Chaaben, Jean Paul Salvestrini

引用次数: 0

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分析和模拟在砷化镓（110）衬底上生长氮化镓过程中记录的原位时间分辨反射率

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical Engineering 工程技术-光学

CiteScore

2.70

自引率

7.70%

发文量

393

审稿时长

2.6 months

期刊介绍： Optical Engineering publishes peer-reviewed papers reporting on research and development in optical science and engineering and the practical applications of known optical science, engineering, and technology.