Incorporating DC bias voltage in poly-harmonic distortion modeling for RF power GaN transistors

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-01-11 DOI:10.1002/jnm.3201

Shuhao Cheng, Xiaoqiang Tang, Zlatica Marinković, Giovanni Crupi, Jialin Cai

引用次数: 0

Abstract

This paper presents a novel poly-harmonic distortion (PHD) model that incorporates the DC input and output bias voltages using Gaussian process regression (GPR). Simulation tests were conducted using a 10-W gallium nitride (GaN) HEMT transistor from Wolfspeed, and the model implementation test was performed in the Keysight Advanced Design System environment. The results showed that the GPR-based PHD model exhibited good performance in predicting both fundamental and harmonic behaviors over a wide range of bias variations with significant advantages over basic linear regression methods. Additionally, the model accurately predicted load-pull simulations. The measurement test was conducted using a 6-W GaN device, and the results showed a mean error of 2.22% and 4.54% for the fundamental and second harmonic of the reflected wave, respectively.

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在射频功率氮化镓晶体管的多谐失真建模中加入直流偏置电压

本文介绍了一种新型多谐波失真 (PHD) 模型，该模型利用高斯过程回归 (GPR) 将直流输入和输出偏置电压纳入其中。仿真测试使用 Wolfspeed 公司的 10 瓦氮化镓（GaN）HEMT 晶体管进行，模型实施测试在 Keysight 高级设计系统环境中进行。结果表明，与基本的线性回归方法相比，基于 GPR 的 PHD 模型在预测宽偏压变化范围内的基波和谐波行为方面具有显著优势。此外，该模型还能准确预测负载拉动模拟。测量测试使用了一个 6 瓦 GaN 器件，结果显示反射波的基波和二次谐波的平均误差分别为 2.22% 和 4.54%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.