Photo-Enhanced Room Temperature Magnetism and Two-Photon Effects in Manganese-Implanted Gallium Nitride p-i-n Structures

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2023-12-29 DOI:10.1109/JQE.2023.3348112

John A. Carlson;Fu-Chen Hsiao;Andrey Mironov;P. Scott Carney;John M. Dallesasse

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引用次数: 0

Abstract

The insertion of manganese into GaN-based p-i-n epitaxial structures allows for a ferromagnetic phase to occur at room temperature that can be photo-enhanced and retained for >8 hours. GaN p-i-n LED structures are implanted with manganese to form a ferromagnetic phase and illuminated with resonant photons across the GaN bandgap. The magnetization after illumination is found to increase by

$0.2~\mu _{B}$

/Mn atom. Subsequent illumination below the GaN:Mn bandgap is found to remove the photo-enhancement of magnetism and fully demagnetize the material. The optically-driven process confirms that photon absorption drives hole-media induced ferromagnetic changes to the top layer in GaN:Mn structures. A modified p-i-n structure is designed that situates a two-dimensional hole gas (2DHG) beneath the magnetic layer for improvement of the hole injection effect. The mid-gap state formed by the implanted manganese in GaN:Mn is simulated for two-photon electromagnetic induced transparency that can control the absorption of the top layer and moderate the hole injection. The design of GaN:Mn p-i-n structures is explored for spin-photon mapping of states for long-term storage in memory systems.

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锰植入氮化镓 pi-n 结构中的光增强室温磁性和双光子效应

在基于氮化镓的 pi-n 外延结构中植入锰，可在室温下形成铁磁相，这种铁磁相可被光增强并保持 8 小时以上。在 GaN pi-n LED 结构中植入锰以形成铁磁相，并用跨 GaN 带隙的谐振光子进行照明。发现照明后的磁化率增加了 0.2~\mu _{B}$ /锰原子。随后在氮化镓：锰带隙以下进行光照，可消除光增强磁性并使材料完全消磁。这一光学驱动过程证实，光子吸收驱动了 GaN:Mn 结构顶层的空穴介质诱导铁磁变化。为了改善空穴注入效应，我们设计了一种改进的 pi-n 结构，将二维空穴气体（2DHG）置于磁层之下。在 GaN:Mn 中植入锰形成的中隙态被模拟为双光子电磁诱导透明，它可以控制顶层的吸收并缓和空穴注入。探讨了 GaN:Mn pi-n 结构的自旋光子映射态设计，以用于存储器系统的长期存储。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.

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