Design and Fabrication of Indium Tin Oxide Based Thin Film Piezoresistive Pressure Sensor

IF 1.5 4区工程技术 Q3 ENGINEERING, MECHANICAL

Experimental Techniques Pub Date : 2024-01-05 DOI:10.1007/s40799-023-00695-5

S. Mala, H. K. E. Latha, A. Udayakumar

{"title":"Design and Fabrication of Indium Tin Oxide Based Thin Film Piezoresistive Pressure Sensor","authors":"S. Mala, H. K. E. Latha, A. Udayakumar","doi":"10.1007/s40799-023-00695-5","DOIUrl":null,"url":null,"abstract":"<div><p>The design and development of Indium Tin Oxide (ITO) thin film based piezoresistive pressure sensor is presented in this paper. ITO (90:10) nanoparticles were synthesized by green combustion method using indium and tin as precursors and, carica papaya seed extract as fuel. ITO (90:10) thin film piezoresistors were deposited using synthesized nanoparticles on AlN coated circular steel (SS 304) diaphragm using E-beam evaporation technique. Diaphragm models of different thickness (0.75, 1 and 1.25 mm) were created using ANSYS finite element analysis in order to determine the maximum stress and deflection region for applied pressure of 1 to 10 bar. ANSYS results exhibited that maximum stress and deflection occurred at the center and circumference of diaphragm. ITO thin film piezoresistors were deposited at these regions using mechanical mask. TiW metal contact was established to these ITO thin film piezoresistors using DC sputtering method. ITO thin film piezoresistive pressure sensor with TiW contact connected in Wheatstone full bridge configuration was calibrated and tested for 50 pressure cycles by applying 2 V DC supply. Sensitivity (S) of the developed ITO thin film pressure sensor was obtained as 0.686, 0.566 and 0.495 mV/bar for diaphragm thickness of 0.75, 1, and 1.25 mm pressure sensors respectively. The non-linearity (NLi) in the output response of the pressure sensors was found to be 9.14, 9.82 and 11.27% for diaphragm thickness of 0.75, 1, and 1.25 mm respectively. Hysteresis errors were found to be 0.0344, 0.0525 and 0.054 for diaphragm thickness of 0.75, 1, and 1.25 mm respectively.</p></div>","PeriodicalId":553,"journal":{"name":"Experimental Techniques","volume":"48 5","pages":"761 - 773"},"PeriodicalIF":1.5000,"publicationDate":"2024-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40799-023-00695-5.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Experimental Techniques","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s40799-023-00695-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, MECHANICAL","Score":null,"Total":0}

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Abstract

The design and development of Indium Tin Oxide (ITO) thin film based piezoresistive pressure sensor is presented in this paper. ITO (90:10) nanoparticles were synthesized by green combustion method using indium and tin as precursors and, carica papaya seed extract as fuel. ITO (90:10) thin film piezoresistors were deposited using synthesized nanoparticles on AlN coated circular steel (SS 304) diaphragm using E-beam evaporation technique. Diaphragm models of different thickness (0.75, 1 and 1.25 mm) were created using ANSYS finite element analysis in order to determine the maximum stress and deflection region for applied pressure of 1 to 10 bar. ANSYS results exhibited that maximum stress and deflection occurred at the center and circumference of diaphragm. ITO thin film piezoresistors were deposited at these regions using mechanical mask. TiW metal contact was established to these ITO thin film piezoresistors using DC sputtering method. ITO thin film piezoresistive pressure sensor with TiW contact connected in Wheatstone full bridge configuration was calibrated and tested for 50 pressure cycles by applying 2 V DC supply. Sensitivity (S) of the developed ITO thin film pressure sensor was obtained as 0.686, 0.566 and 0.495 mV/bar for diaphragm thickness of 0.75, 1, and 1.25 mm pressure sensors respectively. The non-linearity (NLi) in the output response of the pressure sensors was found to be 9.14, 9.82 and 11.27% for diaphragm thickness of 0.75, 1, and 1.25 mm respectively. Hysteresis errors were found to be 0.0344, 0.0525 and 0.054 for diaphragm thickness of 0.75, 1, and 1.25 mm respectively.

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基于氧化铟锡的薄膜压阻压力传感器的设计与制造

本文介绍了基于氧化铟锡（ITO）薄膜的压阻压力传感器的设计和开发。以铟、锡为前体，以番木瓜籽提取物为燃料，通过绿色燃烧法合成了 ITO（90:10）纳米粒子。使用电子束蒸发技术，将合成的纳米粒子沉积在涂有 AlN 的圆钢（SS 304）膜片上，形成了 ITO（90:10）薄膜压阻器。使用 ANSYS 有限元分析创建了不同厚度（0.75、1 和 1.25 毫米）的隔膜模型，以确定施加 1 至 10 巴压力时的最大应力和挠度区域。ANSYS 分析结果表明，最大应力和挠度发生在膜片的中心和圆周。使用机械掩膜在这些区域沉积了 ITO 薄膜压阻器。使用直流溅射法在这些 ITO 薄膜压阻器上建立了 TiW 金属触点。将带有 TiW 触点的 ITO 薄膜压阻式压力传感器连接成惠斯通全桥式结构，并通过 2 V 直流电源进行校准和 50 次压力循环测试。对于膜片厚度为 0.75、1 和 1.25 毫米的压力传感器，所开发的 ITO 薄膜压力传感器的灵敏度（S）分别为 0.686、0.566 和 0.495 mV/bar。隔膜厚度为 0.75、1 和 1.25 毫米时，压力传感器输出响应的非线性（NLi）分别为 9.14、9.82 和 11.27%。隔膜厚度为 0.75、1 和 1.25 毫米时，滞后误差分别为 0.0344、0.0525 和 0.054。

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来源期刊

Experimental Techniques 工程技术-材料科学：表征与测试

CiteScore

3.50

自引率

6.20%

发文量

审稿时长

5.2 months

期刊介绍： Experimental Techniques is a bimonthly interdisciplinary publication of the Society for Experimental Mechanics focusing on the development, application and tutorial of experimental mechanics techniques. The purpose for Experimental Techniques is to promote pedagogical, technical and practical advancements in experimental mechanics while supporting the Society''s mission and commitment to interdisciplinary application, research and development, education, and active promotion of experimental methods to: - Increase the knowledge of physical phenomena - Further the understanding of the behavior of materials, structures, and systems - Provide the necessary physical observations necessary to improve and assess new analytical and computational approaches.