Effect of passivation coating on the HgCdTe heterostructures stability at elevated storage temperature

IF 1.1 4区 工程技术 Q4 OPTICS
Andrew R. Novoselov, Dmitriy Protasov, V. Kostyuchenko
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Abstract

Abstract. It was shown that the concentration of charge carriers and the stoichiometry of near-surface region are changed in p-type HgCdTe films with non-passivated and soiled by indium surface under storage temperatures 80°C and 120°C. The concentration of holes increased up to 1024  cm  −  3 and mobility dropped up to 12  cm2  /    (  V  ×  s  )   under heating. From acquired Auger spectra, it was obtained that the mercury concentration decreased but the cadmium concentration increased in near-surface region as the indium spot approached. The surface passivation by photoresist prevented these degradation processes. The current–voltage characteristics of p-n junctions around the indium spots on the surface of p-type HgCdTe films passivated by SiO2  /  Si3N4 layers were measured after storage temperatures from 60°C up to 120° C. It was found that the p-n junctions closest to the indium spots have an increased dark current. The usage of an additional passivation layer of anodic oxide suppressed the appearance of regions with increased dark currents. It was concluded that the additional passivation layer of anodic oxide is necessary for durable and stable work of infrared detector arrays based on HgCdTe films.
钝化涂层对 HgCdTe 异质结构在高储存温度下稳定性的影响
摘要研究表明,在 80°C 和 120°C 的储存温度下,表面未钝化和被铟污染的 p 型碲化镉汞薄膜中电荷载流子的浓度和近表面区域的化学计量发生了变化。在加热条件下,空穴浓度增加到 1024 cm - 3,迁移率下降到 12 cm2 / ( V × s )。从获得的奥杰光谱可以看出,随着铟点的接近,汞浓度降低,但镉浓度在近表面区域增加。光刻胶的表面钝化防止了这些降解过程。在 60°C 至 120°C 的储存温度下,测量了经 SiO2 / Si3N4 层钝化的 p 型 HgCdTe 薄膜表面铟点周围 p-n 结的电流-电压特性。使用阳极氧化物附加钝化层可以抑制暗电流增加区域的出现。由此得出结论,阳极氧化物附加钝化层是基于碲化镉汞薄膜的红外探测器阵列持久稳定工作的必要条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Optical Engineering
Optical Engineering 工程技术-光学
CiteScore
2.70
自引率
7.70%
发文量
393
审稿时长
2.6 months
期刊介绍: Optical Engineering publishes peer-reviewed papers reporting on research and development in optical science and engineering and the practical applications of known optical science, engineering, and technology.
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