Inherent and induced defects in mixed-phase CuO nanoparticles

Next Nanotechnology Pub Date : 2024-01-01 DOI:10.1016/j.nxnano.2023.100030

Nannuri Usharani , Ramagiri Praveen Kumar , Arnab Sankar Bhattacharyya , Amireddy Raju

{"title":"Inherent and induced defects in mixed-phase CuO nanoparticles","authors":"Nannuri Usharani , Ramagiri Praveen Kumar , Arnab Sankar Bhattacharyya , Amireddy Raju","doi":"10.1016/j.nxnano.2023.100030","DOIUrl":null,"url":null,"abstract":"<div><p>Copper (Cupric) oxide is a readily synthesized, non-toxic metal oxide with a wide range of uses, including the treatment of water, the manufacture of electronic devices, solar cells, cathodes for lithium-ion primary batteries, gas sensors, electrochromic devices, supercapacitors, and field effect transistors. The effects of Zn doping in CuO in three different concentrations (weights %) were investigated. The band gap and carrier concentration were altered due to the formation of defect energy states, lattice stresses, and the formation of ZnO, and Cu2O in addition to CuO. Temperature increases from room temperature resulted in the production of metal oxides with preferred crystal growth in specific orientations. An increase in temperature, from 300 °C to 500 °C, generated residual strain release and atomic diffusions, resulting in grain growth and a reduction in the band gap. The changes in UV and PL spectra predicted the growth kinetics involved</p></div>","PeriodicalId":100959,"journal":{"name":"Next Nanotechnology","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S294982952300030X/pdfft?md5=f14ccbe32cc18c8a5880b4a78f141c8d&pid=1-s2.0-S294982952300030X-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Next Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S294982952300030X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

Copper (Cupric) oxide is a readily synthesized, non-toxic metal oxide with a wide range of uses, including the treatment of water, the manufacture of electronic devices, solar cells, cathodes for lithium-ion primary batteries, gas sensors, electrochromic devices, supercapacitors, and field effect transistors. The effects of Zn doping in CuO in three different concentrations (weights %) were investigated. The band gap and carrier concentration were altered due to the formation of defect energy states, lattice stresses, and the formation of ZnO, and Cu2O in addition to CuO. Temperature increases from room temperature resulted in the production of metal oxides with preferred crystal growth in specific orientations. An increase in temperature, from 300 °C to 500 °C, generated residual strain release and atomic diffusions, resulting in grain growth and a reduction in the band gap. The changes in UV and PL spectra predicted the growth kinetics involved

查看原文本刊更多论文

混相氧化铜纳米粒子中的固有缺陷和诱导缺陷

氧化铜（Cupric）是一种易于合成的无毒金属氧化物，用途广泛，包括水处理、电子设备制造、太阳能电池、锂离子原电池阴极、气体传感器、电致变色装置、超级电容器和场效应晶体管。研究了在三种不同浓度（重量百分比）的氧化铜中掺入锌的影响。由于缺陷能态的形成、晶格应力以及除氧化铜之外的氧化锌和氧化铜的形成，带隙和载流子浓度发生了变化。温度从室温升高后，生成的金属氧化物晶体以特定的取向优先生长。温度从 300 °C 升至 500 °C，会产生残余应变释放和原子扩散，导致晶粒生长和带隙减小。紫外光谱和聚光光谱的变化预示了生长动力学的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Next Nanotechnology

自引率

0.00%

发文量