Rutile-type Ge x Sn1−x O2 alloy layers lattice-matched to TiO2 substrates for device applications

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2024-01-03 DOI:10.35848/1882-0786/ad15f3

Hitoshi Takane, Takayoshi Oshima, Takayuki Harada, Kentaro Kaneko and Katsuhisa Tanaka

引用次数: 0

Abstract

We report the characterization and application of mist-CVD-grown rutile-structured GexSn1−xO2 (x = ∼0.53) films lattice-matched to isostructural TiO2(001) substrates. The grown surface was flat throughout the growth owing to the lattice-matching epitaxy. Additionally, the film was single-crystalline without misoriented domains and TEM-detectable threading dislocations due to the coherent heterointerface. Using the Ge0.49Sn0.51O2 film with a carrier density of 7.8 × 1018 cm−3 and a mobility of 24 cm2V−1s−1, lateral Schottky barrier diodes were fabricated with Pt anodes and Ti/Au cathodes. The diodes exhibited rectifying properties with a rectification ratio of 8.2 × 104 at ±5 V, showing the potential of GexSn1-xO2 as a practical semiconductor.

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与 TiO2 基底晶格匹配的金红石型 Ge x Sn1-x O2 合金层用于器件应用

我们报告了雾状 CVD 生长的金红石结构 GexSn1-xO2 (x = ∼0.53)薄膜的表征和应用，该薄膜与等结构 TiO2(001) 基底晶格匹配。由于采用了晶格匹配外延，生长表面在整个生长过程中都是平整的。此外，由于存在相干异质面，薄膜是单晶的，没有错向畴和 TEM 可检测到的穿线位错。利用载流子密度为 7.8 × 1018 cm-3、迁移率为 24 cm2V-1s-1 的 Ge0.49Sn0.51O2 薄膜，制造出了铂阳极和钛/金阴极的横向肖特基势垒二极管。二极管具有整流特性，在 ±5 V 时的整流比为 8.2 × 104，显示了 GexSn1-xO2 作为实用半导体的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).