Toward efficient and industrially compatible fully textured perovskite silicon tandem solar cells: Controlled process parameters for reliable perovskite formation

IF 8 2区 材料科学 Q1 ENERGY & FUELS
Oussama Er-raji, Alexander J. Bett, Stefan Lange, Henning Nagel, Martin Bivour, Oliver Schultz-Wittmann, Christian Hagendorf, Martin Hermle, Juliane Borchert, Stefan W. Glunz, Patricia S. C. Schulze
{"title":"Toward efficient and industrially compatible fully textured perovskite silicon tandem solar cells: Controlled process parameters for reliable perovskite formation","authors":"Oussama Er-raji, Alexander J. Bett, Stefan Lange, Henning Nagel, Martin Bivour, Oliver Schultz-Wittmann, Christian Hagendorf, Martin Hermle, Juliane Borchert, Stefan W. Glunz, Patricia S. C. Schulze","doi":"10.1002/pip.3770","DOIUrl":null,"url":null,"abstract":"Capitalizing on the existing silicon industry, fully textured perovskite-silicon tandem solar cells have a great potential to penetrate the electricity market. While the use of textured silicon with large pyramid size (&gt; 1 μm) enhances the power conversion efficiency (<i>PCE</i>), it also presents process complications. To achieve high performance, meticulous control of deposition parameters on textured silicon is required. This study provides a guideline for the use of the hybrid evaporation/spin-coating route to form high-quality perovskite absorbers. Using various characterization techniques, we highlight intrinsic differences between perovskite growth on flat versus textured substrates. Furthermore, we provide pathways to ensure a high perovskite phase purity, reveal mitigation strategies to avoid the formation of undesired dendritic perovskite structures, give guidelines to ensure photostability, and discuss the “misleading” effect of residual PbI<sub>2</sub> on the perovskite photoluminescence response. A good understanding of the perovskite growth on textured silicon enables the fabrication of a tandem device with a <i>PCE</i> &gt; 26% (without employing additives or surface treatments) and a good operational stability. The comprehensive guidelines in this study provide a better understanding of perovskite formation on textured silicon and can be transferred when upscaling the hybrid route perovskite deposition.","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"71 1","pages":""},"PeriodicalIF":8.0000,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Photovoltaics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pip.3770","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0

Abstract

Capitalizing on the existing silicon industry, fully textured perovskite-silicon tandem solar cells have a great potential to penetrate the electricity market. While the use of textured silicon with large pyramid size (> 1 μm) enhances the power conversion efficiency (PCE), it also presents process complications. To achieve high performance, meticulous control of deposition parameters on textured silicon is required. This study provides a guideline for the use of the hybrid evaporation/spin-coating route to form high-quality perovskite absorbers. Using various characterization techniques, we highlight intrinsic differences between perovskite growth on flat versus textured substrates. Furthermore, we provide pathways to ensure a high perovskite phase purity, reveal mitigation strategies to avoid the formation of undesired dendritic perovskite structures, give guidelines to ensure photostability, and discuss the “misleading” effect of residual PbI2 on the perovskite photoluminescence response. A good understanding of the perovskite growth on textured silicon enables the fabrication of a tandem device with a PCE > 26% (without employing additives or surface treatments) and a good operational stability. The comprehensive guidelines in this study provide a better understanding of perovskite formation on textured silicon and can be transferred when upscaling the hybrid route perovskite deposition.

Abstract Image

实现高效和工业兼容的全纹理包晶硅串联太阳能电池:控制工艺参数,实现可靠的包晶形成
利用现有的硅产业,全纹理过氧化物硅-硅串联太阳能电池在电力市场上具有巨大的渗透潜力。虽然使用大金字塔尺寸(> 1 μm)的纹理硅可提高功率转换效率(PCE),但同时也带来了工艺复杂性。为了实现高性能,需要对纹理硅的沉积参数进行细致的控制。本研究为使用混合蒸发/旋转涂层路线形成高质量的包晶吸收器提供了指导。通过使用各种表征技术,我们强调了在平面基底和纹理基底上生长的包晶石之间的内在差异。此外,我们还提供了确保高包晶石相纯度的途径,揭示了避免形成不受欢迎的树枝状包晶石结构的缓解策略,给出了确保光稳定性的指导原则,并讨论了残留 PbI2 对包晶石光致发光响应的 "误导 "作用。通过充分了解在纹理硅上的包晶生长过程,可以制造出 PCE > 26% 的串联器件(无需使用添加剂或表面处理),并且具有良好的运行稳定性。本研究中的综合指南让人们更好地了解了质地硅上的包晶形成,并可在升级混合路线包晶沉积时加以借鉴。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Progress in Photovoltaics
Progress in Photovoltaics 工程技术-能源与燃料
CiteScore
18.10
自引率
7.50%
发文量
130
审稿时长
5.4 months
期刊介绍: Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers. The key criterion is that all papers submitted should report substantial “progress” in photovoltaics. Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables. Examples of papers that will not be considered for publication are those that report development in materials without relation to data on cell performance, routine analysis, characterisation or modelling of cells or processing sequences, routine reports of system performance, improvements in electronic hardware design, or country programs, although invited papers may occasionally be solicited in these areas to capture accumulated “progress”.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信