Enhanced supercapacitive performance of electrophoretically deposited nanostructured molybdenum-doped Mn3O4 thin films

IF 0.7 4区 材料科学 Q4 METALLURGY & METALLURGICAL ENGINEERING
Tanaji S. Patil, R. S. Kamble, R. B. Patil, M. V. Takale, S. A. Gangawane
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引用次数: 0

Abstract

Abstract Nanostructured molybdenum (Mo)-doped Mn3O4 thin films were successfully deposited on stainless steel substrates by a facile electrophoretic deposition technique. The effect of Mo doping on the structural and supercapacitive properties of Mn3O4 thin films was investigated. The nanostructured morphology of spinel tetragonal Hausmannite Mn3O4 thin films was elucidated with the help of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman studies. The presence of mesopores in the nanostructure with an average pore size of 41 nm was confirmed by Brunauer–Emmett–Teller studies. The different valence states of Mn and Mo are confirmed by X-ray photoelectron spectroscopy. The symmetrical quasi-rectangular-shaped cyclic voltammetry curves without any redox peak and nearly triangular/symmetric galvanostatic charge–discharge curves for Mn3O4 thin films elucidated the pseudocapacitive behavior. Electrochemical impedance spectroscopy revealed that pure and Mo-doped Mn3O4 thin films have lower resistances. Improved supercapacitive performance of 2 % Mo-doped Mn3O4 thin film was confirmed by higher specific capacitance 497 F g−1 at a current density of 1.6 A g−1. The boosted supercapacitive performance of Mo-doped Mn3O4 thin films has identified the outstanding incorporation of Mo ions into the Mn3O4 lattice.
增强电泳沉积纳米结构掺钼 Mn3O4 薄膜的超级电容性能
摘要 采用简便的电泳沉积技术,在不锈钢基底上成功沉积了掺杂钼(Mo)的纳米结构 Mn3O4 薄膜。研究了钼掺杂对 Mn3O4 薄膜结构和超级电容特性的影响。在 X 射线衍射、扫描电子显微镜、透射电子显微镜和拉曼研究的帮助下,阐明了尖晶石四方豪斯曼矿 Mn3O4 薄膜的纳米结构形态。布鲁瑙尔-埃美特-泰勒研究证实,纳米结构中存在平均孔径为 41 纳米的介孔。X 射线光电子能谱证实了锰和钼的不同价态。Mn3O4 薄膜无氧化还原峰的对称准矩形循环伏安曲线和近似三角形/对称的电静态充放电曲线阐明了其假电容行为。电化学阻抗谱显示,纯 Mn3O4 薄膜和掺杂 Mo 的 Mn3O4 薄膜具有较低的电阻。在电流密度为 1.6 A g-1 时,掺杂 2 % Mo 的 Mn3O4 薄膜具有更高的比电容 497 F g-1,从而证实了其超级电容性能的提高。掺杂钼的 Mn3O4 薄膜超级电容性能的提高证明了钼离子在 Mn3O4 晶格中的出色掺入。
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来源期刊
CiteScore
1.30
自引率
12.50%
发文量
119
审稿时长
6.4 months
期刊介绍: The International Journal of Materials Research (IJMR) publishes original high quality experimental and theoretical papers and reviews on basic and applied research in the field of materials science and engineering, with focus on synthesis, processing, constitution, and properties of all classes of materials. Particular emphasis is placed on microstructural design, phase relations, computational thermodynamics, and kinetics at the nano to macro scale. Contributions may also focus on progress in advanced characterization techniques. All articles are subject to thorough, independent peer review.
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