Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması

Karadeniz Fen Bilimleri Dergisi Pub Date : 2023-12-15 DOI:10.31466/kfbd.1276114

Ahmet Bi̇lgi̇li̇, Ömer Akpinar, Naki Kaya, M. Öztürk

引用次数: 0

Abstract

In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.

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将 QMSA 方法应用于 Al 0.3 Ga 0.7 N/GaN HEMT 结构

本研究利用金属有机气相外延（MOVPE）技术，在蓝宝石（Al2O3）衬底上生长出 Al 0.3 Ga 0.7 N/GaN 高电子迁移率晶体管（HEMT）结构，并对其电子传输和磁传输特性进行了研究。电阻率是在 20-350 K 温度范围内测量的。霍尔迁移率和霍尔载流子浓度是在 0-1.5 T 磁场范围和相同温度范围内测量的。利用定量迁移率谱分析（QMSA）分析了磁传输特性。利用 QMSA 分析结果区分了 2DEG 和 3DEG 传输机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Karadeniz Fen Bilimleri Dergisi

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