Epitaxial growth of copper phthalocyanine on a large single-grain of thin film alkyl perylene diimide

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2023-12-22 DOI:10.35848/1347-4065/ad1847

Shuhei Tanaka, Yusuke Takagawa, S. Maruyama, Y. Shibata, T. Koganezawa, K. Kaminaga, Hideo Fujikake, Yuji Matsumoto

引用次数: 0

Abstract

In this work, heteroepitaxial growth of copper phthalocyanine (CuPc) on a large single-grain of thin film N,N'-Di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C8) was investigated. Vacuum-deposited PTCDI-C8 thin films at a growth temperature of ~180 °C exhibited large grain growth of several hundred micrometers or more in size, and their surface consisted of stripe islands with molecular steps. CuPc deposited at 180 °C on this PTCDI-C8 large grain underlayer was found to grow epitaxially with its needle-like crystals dominantly oriented in one unique direction. The mechanism of the observed epitaxy is discussed based on the results of in-plane X-ray diffraction and the initial growth morphology.

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铜酞菁在大型单晶粒烷基过二亚胺薄膜上的外延生长

这项工作研究了铜酞菁（CuPc）在 N,N'-二正辛基-3,4,9,10-苝四羧酸二亚胺（PTCDI-C8）大单晶粒薄膜上的异外延生长。在大约 180 °C 的生长温度下真空沉积的 PTCDI-C8 薄膜呈现出几百微米或更大尺寸的大晶粒生长，其表面由带有分子阶梯的条纹岛组成。在这种 PTCDI-C8 大晶粒底层上以 180 °C 沉积的 CuPc 被发现是外延生长的，其针状晶体主要朝向一个独特的方向。根据面内 X 射线衍射结果和初始生长形态，讨论了所观察到的外延机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS