Enhancement of Mg induced lateral crystallization of amorphous Ge on insulating substrate by two-step annealing

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2023-12-21 DOI:10.35848/1347-4065/ad17ef

Atsuki Morimoto, Towa Hirai, Ayato Takazaiku, Yo Eto, Hajime Kuwazuru, Kenichiro Takakura, I. Tsunoda

引用次数: 0

Abstract

Magnesium (Mg) induced lateral crystallization (Mg-ILC) of amorphous Ge on SiO2 stacked structure was investigated. From Raman mapping images, the critical annealing temperature necessary to induce Mg-ILC of amorphous Ge was estimated to be about 350 oC. Furthermore, the Mg-ILC length was truly narrow (~ 2 µm) compared with other metal catalyst after annealing at 350 oC for 1hour. To enhance the Mg-ILC, we have examined a two-step annealing method for Mg-ILC of amorphous Ge on SiO2. The Mg-ILC length is significantly enhanced (~ 4.5 times) by using a two-step annealing process, which is due to the enhancement of Mg diffusion into amorphous Ge during the first stage low temperature annealing.

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通过两步退火增强非晶态 Ge 在绝缘衬底上的镁诱导横向结晶

研究了二氧化硅叠层结构上非晶态 Ge 的镁（Mg）诱导横向结晶（Mg-ILC）。根据拉曼图谱图像，估计诱导非晶态 Ge 的 Mg-ILC 所需的临界退火温度约为 350 oC。此外，与其他金属催化剂相比，在 350 摄氏度退火 1 小时后，Mg-ILC 长度确实变窄了（约 2 微米）。为了提高 Mg-ILC 的效果，我们研究了在二氧化硅上对非晶态 Ge 的 Mg-ILC 进行两步退火的方法。通过使用两步退火工艺，Mg-ILC 长度显著增加（约 4.5 倍），这是由于在第一阶段低温退火过程中，镁向非晶态 Ge 的扩散得到了增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS