Threshold voltage uniformity improvement by introducing charge injection tuning for LTPS TFTs with metal/oxide/nitride/oxide/silicon structure

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2023-12-22 DOI:10.35848/1347-4065/ad184d

Tetsuya Goto, T. Suwa, K. Katayama, Shu Nishida, H. Ikenoue, S. Sugawa

引用次数: 0

Abstract

LTPS TFTs with MONOS structure was fabricated to investigate the feasibility of suppressing threshold voltage variations between TFTs. By applying relatively high positive and negative gate bias voltages, threshold voltage could be tuned positively and negatively by injecting charges to charge trap layer, respectively. Stability of threshold voltage against positive gate bias at a level close to the actual circuit operation was not degraded compared to the case of as-fabricated TFT. Uniformization of threshold voltage distribution could be achieved in a preliminary test using 16 TFTs by converging threshold voltages with a target value by tuning threshold voltages for each TFT.

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通过为具有金属/氧化物/氮化物/氧化物/硅结构的 LTPS TFT 引入电荷注入调谐来改善阈值电压均匀性

为了研究抑制 TFT 之间阈值电压变化的可行性，我们制作了具有 MONOS 结构的 LTPS TFT。通过施加相对较高的正负栅极偏置电压，向电荷阱层注入电荷可分别调节阈值电压的正负。阈值电压在正栅极偏压下的稳定性在接近实际电路工作时的水平，与制作完成的 TFT 相比没有降低。在使用 16 块 TFT 进行的初步测试中，通过调整每块 TFT 的阈值电压，使阈值电压趋于目标值，从而实现了阈值电压分布的均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS