The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation

IF 1.5 4区工程技术 Q3 MICROSCOPY

Journal of microscopy Pub Date : 2023-12-19 DOI:10.1111/jmi.13251

Shuo Liu, Jiawei Dong, Zhenyu Ma, Wenyu Hu, Yong Deng, Yuechun Shi, Xiaoyi Wang, Yang Qiu, Thomas Walther

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Abstract

Gallium ion (Ga⁺) beam damage induced indium (In) precipitation in indium gallium arsenide (InGaAs)/indium aluminium arsenide (InAlAs) multiple quantum wells and its corresponding evolution under electron beam irradiation was investigated by valence electron energy loss spectroscopy (VEELS) and high-angle annular dark-field imaging (HAADF) in scanning transmission electron microscopy (STEM). Compared with argon ion milling for sample preparation, the heavier projectiles of Ga⁺ ions pose a risk to trigger In formation in the form of tiny metallic In clusters. These are shown to be sensitive to electron irradiation and can increase in number and size under the electron beam, deteriorating the structure. Our finding reveals the potential risk of formation of In clusters during focused ion beam (FIB) preparation of InGaAs/InAlAs quantum well samples and their subsequent growth under STEM-HAADF imaging, where initially invisible In clusters of a few atoms can move and swell during electron beam exposure.

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镓聚焦离子束制备的 InGaAs/InAlAs 量子阱样品中铟沉淀在电子束辐照下的演变。

通过价电子能损耗谱（VEELS）和扫描透射电子显微镜（STEM）中的高角度环形暗场成像（HAADF），研究了镓离子（Ga+）束损伤诱导砷化铟（InGaAs）/砷化铟铝（InAlAs）多量子阱中的铟（In）析出及其在电子束辐照下的相应演变。与氩离子研磨制备样品相比，较重的 Ga+ 离子射弹有可能以微小金属铟簇的形式引发铟的形成。事实证明，这些微小金属铟簇对电子辐照非常敏感，在电子束的作用下，它们的数量和尺寸都会增加，从而导致结构恶化。我们的发现揭示了在聚焦离子束（FIB）制备 InGaAs/InAlAs 量子阱样品及其随后在 STEM-HAADF 成像下的生长过程中形成 In 簇的潜在风险。布局描述本文通过价电子能损耗谱（VEELs）、能量色散 X 射线光谱（EDXs）和基于探针像差校正扫描透射电子显微镜的高角度环形暗场（HAADF）成像技术，研究了电子束辐照下 InGaAs/InAlAs 多量子阱中 Ga+ 植入诱导 In 沉淀的演变过程。与 Ar+ 离子轰击不同，聚焦的 Ga+ 离子射弹能够触发 InGaAs/InAlAs 多量子阱中的 In 间隙团聚，从而形成金属 In 沉淀。之后，通过在铟析出区域进行广泛的电子束光栅化，电子辐照时间的增加会导致铟簇尺寸的明显膨胀。特别是在含有几个原子的铟析出物的区域，原子图像中看不到铟簇的形态。持续的电子辐照可能会促进铟的团聚，从而使铟沉淀的结构在 HAADF 图像中得以解析。我们的发现揭示了在聚焦 Ga+ 离子束轰击 InGaAs/InAlAs 半导体过程中形成铟沉淀的潜在风险，以及随后在电子束光栅化作用下铟团聚的演变过程。这些发现强调了在使用 TEM 研究 FIB 制备的 In 基 III-V 量子阱试样（即使是 In(Ga,Al)As 系统）时需要谨慎，因为最初形成的富 In 簇非常小，在一段时间内仍不可见。本文受版权保护。保留所有权利。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of microscopy 工程技术-显微镜技术

CiteScore

4.30

自引率

5.00%

发文量

审稿时长

1 months

期刊介绍： The Journal of Microscopy is the oldest journal dedicated to the science of microscopy and the only peer-reviewed publication of the Royal Microscopical Society. It publishes papers that report on the very latest developments in microscopy such as advances in microscopy techniques or novel areas of application. The Journal does not seek to publish routine applications of microscopy or specimen preparation even though the submission may otherwise have a high scientific merit. The scope covers research in the physical and biological sciences and covers imaging methods using light, electrons, X-rays and other radiations as well as atomic force and near field techniques. Interdisciplinary research is welcome. Papers pertaining to microscopy are also welcomed on optical theory, spectroscopy, novel specimen preparation and manipulation methods and image recording, processing and analysis including dynamic analysis of living specimens. Publication types include full papers, hot topic fast tracked communications and review articles. Authors considering submitting a review article should contact the editorial office first.