{"title":"Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT","authors":"","doi":"10.1007/s10825-023-02121-w","DOIUrl":null,"url":null,"abstract":"<h3>Abstract</h3> <p>The modeling of self-heating in GaN-based devices is presented in this paper. A setup for DC <em>I</em>–<em>V</em> and short pulse <em>I</em>–<em>V</em> was used to characterize the device. This paper used four different methods to estimate self-heating, thermal resistance, and channel temperature in a GaN-based high electron mobility transistor (HEMT) fabricated on a SiC substrate. The procedures are basic and straightforward, making them suitable for determining self-heating. We concentrated on reducing the number of measurements needed to determine self-heating and/or channel temperature for any applied ambient temperatures. In addition, a summary of channel temperature for different GaN HEMTs found in—literatures is also presented. Finally, all of the findings are compared using a fair difference threshold. This work reflects an essential and comprehensive understanding of device technology.</p>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s10825-023-02121-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The modeling of self-heating in GaN-based devices is presented in this paper. A setup for DC I–V and short pulse I–V was used to characterize the device. This paper used four different methods to estimate self-heating, thermal resistance, and channel temperature in a GaN-based high electron mobility transistor (HEMT) fabricated on a SiC substrate. The procedures are basic and straightforward, making them suitable for determining self-heating. We concentrated on reducing the number of measurements needed to determine self-heating and/or channel temperature for any applied ambient temperatures. In addition, a summary of channel temperature for different GaN HEMTs found in—literatures is also presented. Finally, all of the findings are compared using a fair difference threshold. This work reflects an essential and comprehensive understanding of device technology.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.