A practical synthesis and analysis of the fractional-order FitzHugh-Nagumo neuronal model

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2023-12-13 DOI:10.1007/s10825-023-02120-x

İbrahim Ethem Saçu

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Abstract

This work focuses on the practical and reasonable synthesis of the fractional-order FitzHugh-Nagumo (FHN) neuronal model. First of all, the descriptive equations of the fractional FHN neuronal system have been given, and then the system stability has been analyzed according to these equations. Secondly, the Laplace-Adomian-decomposition-method is introduced for the numerical solution of the fractional-order FHN neuron model. By means of this method, rapid convergence can be achieved as well as advantages in terms of low hardware cost and uncomplicated computation. In numerical analysis, different situations have been evaluated in detail, depending on the values of fractional-order parameter and external stimulation. Third, the coupling status of fractional-order FHN neuron models is discussed. Finally, experimental validation of the numerical results obtained for the fractional-order single and coupled FHN neurons has been performed by means of the digital signal processor control card F28335 Delfino. Thus, the efficiency of the introduced method for synthesizing the fractional FHN neuronal model in a fast, low cost and simple way has been demonstrated.

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分数阶 FitzHugh-Nagumo 神经元模型的实用综合与分析

本文主要研究分数阶FitzHugh-Nagumo (FHN)神经元模型的实用和合理的合成。首先给出了分数阶FHN神经元系统的描述方程，然后根据这些方程对系统的稳定性进行了分析。其次，引入laplace - adomian分解法对分数阶FHN神经元模型进行数值求解。该方法具有收敛速度快、硬件成本低、计算简单等优点。在数值分析中，根据分数阶参数值和外部刺激，详细地评估了不同的情况。第三，讨论了分数阶FHN神经元模型的耦合状态。最后，利用数字信号处理器控制卡F28335 Delfino对分数阶单神经元和耦合FHN神经元的数值结果进行了实验验证。由此证明了该方法快速、低成本、简单地合成分数阶FHN神经元模型的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.