Versatile implied open-circuit voltage imaging method and its application in monolithic tandem solar cells

IF 8 2区 材料科学 Q1 ENERGY & FUELS
Oliver Fischer, Anh Dinh Bui, Florian Schindler, Daniel Macdonald, Stefan W. Glunz, Hieu T. Nguyen, Martin C. Schubert
{"title":"Versatile implied open-circuit voltage imaging method and its application in monolithic tandem solar cells","authors":"Oliver Fischer, Anh Dinh Bui, Florian Schindler, Daniel Macdonald, Stefan W. Glunz, Hieu T. Nguyen, Martin C. Schubert","doi":"10.1002/pip.3754","DOIUrl":null,"url":null,"abstract":"As the efficiency of perovskite silicon tandem solar cells is increasing, the upscaling for industrial production is coming into focus. Spatially resolved, quantitative, fast, and reliable contactless measurement techniques are demanded for quality assurance and to pinpoint the cause of performance losses in perovskite silicon tandem solar cells. In this publication, we present a measurement method based on spectrally integrated photoluminescence (PL) imaging to extract subcell-selective implied open-circuit (\n<math altimg=\"urn:x-wiley:10627995:media:pip3754:pip3754-math-0001\" display=\"inline\" location=\"graphic/pip3754-math-0001.png\" overflow=\"scroll\">\n<semantics>\n<mrow>\n<mi>i</mi>\n<msub>\n<mi>V</mi>\n<mi>oc</mi>\n</msub>\n</mrow>\n$$ i{V}_{\\mathrm{oc}} $$</annotation>\n</semantics></math>) images from monolithic perovskite silicon tandem solar cells. We validate the approach using spectrally resolved absolute PL measurements based on an integrating sphere for the perovskite top cell and PL-calibrated carrier lifetime images for the silicon bottom cell. Additionally, <math altimg=\"urn:x-wiley:10627995:media:pip3754:pip3754-math-0002\" display=\"inline\" location=\"graphic/pip3754-math-0002.png\" overflow=\"scroll\">\n<semantics>\n<mrow>\n<msub>\n<mi>V</mi>\n<mi>oc</mi>\n</msub>\n</mrow>\n$$ {V}_{\\mathrm{oc}} $$</annotation>\n</semantics></math> measurements of solar cells with low contact losses are used to validate the new measurement technique. We find a good agreement of the <math altimg=\"urn:x-wiley:10627995:media:pip3754:pip3754-math-0003\" display=\"inline\" location=\"graphic/pip3754-math-0003.png\" overflow=\"scroll\">\n<semantics>\n<mrow>\n<mi>i</mi>\n<msub>\n<mi>V</mi>\n<mi>oc</mi>\n</msub>\n</mrow>\n$$ i{V}_{\\mathrm{oc}} $$</annotation>\n</semantics></math> images with the validating measurements with a maximum deviation of well below 1% compared to the validation measurements.","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 1","pages":""},"PeriodicalIF":8.0000,"publicationDate":"2023-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Photovoltaics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pip.3754","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0

Abstract

As the efficiency of perovskite silicon tandem solar cells is increasing, the upscaling for industrial production is coming into focus. Spatially resolved, quantitative, fast, and reliable contactless measurement techniques are demanded for quality assurance and to pinpoint the cause of performance losses in perovskite silicon tandem solar cells. In this publication, we present a measurement method based on spectrally integrated photoluminescence (PL) imaging to extract subcell-selective implied open-circuit ( i V oc $$ i{V}_{\mathrm{oc}} $$ ) images from monolithic perovskite silicon tandem solar cells. We validate the approach using spectrally resolved absolute PL measurements based on an integrating sphere for the perovskite top cell and PL-calibrated carrier lifetime images for the silicon bottom cell. Additionally, V oc $$ {V}_{\mathrm{oc}} $$ measurements of solar cells with low contact losses are used to validate the new measurement technique. We find a good agreement of the i V oc $$ i{V}_{\mathrm{oc}} $$ images with the validating measurements with a maximum deviation of well below 1% compared to the validation measurements.

Abstract Image

通用隐含开路电压成像方法及其在单片串联太阳能电池中的应用
随着钙钛矿硅串联太阳能电池效率的不断提高,其产业化升级成为人们关注的焦点。在钙钛矿硅串联太阳能电池中,需要空间分辨、定量、快速和可靠的非接触式测量技术来保证质量,并查明性能损失的原因。在这篇文章中,我们提出了一种基于光谱集成光致发光(PL)成像的测量方法,从单片钙钛矿硅串联太阳能电池中提取亚电池选择性隐含开路(iVoc $$ i{V}_{\mathrm{oc}} $$)图像。我们使用基于积分球的钙钛矿顶部电池的光谱分辨绝对PL测量和基于PL校准的硅底部电池的载流子寿命图像来验证该方法。此外,Voc $$ {V}_{\mathrm{oc}} $$低接触损耗太阳能电池的测量被用来验证新的测量技术。我们发现iVoc $$ i{V}_{\mathrm{oc}} $$图像与验证测量结果非常吻合,最大偏差远低于1% compared to the validation measurements.
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Progress in Photovoltaics
Progress in Photovoltaics 工程技术-能源与燃料
CiteScore
18.10
自引率
7.50%
发文量
130
审稿时长
5.4 months
期刊介绍: Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers. The key criterion is that all papers submitted should report substantial “progress” in photovoltaics. Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables. Examples of papers that will not be considered for publication are those that report development in materials without relation to data on cell performance, routine analysis, characterisation or modelling of cells or processing sequences, routine reports of system performance, improvements in electronic hardware design, or country programs, although invited papers may occasionally be solicited in these areas to capture accumulated “progress”.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信