Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

IF 13.4 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nano Convergence Pub Date : 2023-12-01 DOI:10.1186/s40580-023-00403-4

Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park

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引用次数: 0

Abstract

HfO₂ shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (V_o), which is the most frequently observed intrinsic defect in HfO₂-based films, determines the physical/electrical properties and device performance. V_o influences the polymorphism and the resulting ferroelectric properties of HfO₂. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the V_o concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of V_o form the main mechanism behind the RS behavior observed in HfO₂, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to V_o. Therefore, the mechanism of V_o formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO₂ should be understood. This study comprehensively reviews the literature on V_o in HfO₂ from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO₂-based semiconductor devices.

Graphical Abstract

查看原文本刊更多论文

氧空位在铁电或电阻开关氧化铪中的作用。

HfO2由于其优异的电学性能和与基于原子层沉积等成熟制造工艺的互补金属氧化物半导体技术的兼容性，在新兴的铁电和电阻开关(RS)存储器件中显示出前景。氧空位(Vo)是hfo2基薄膜中最常见的固有缺陷，它决定了hfo2基薄膜的物理/电学性能和器件性能。Vo影响了HfO2的多态性及其铁电性能。此外，铁电存储器的开关速度和持久性与Vo浓度和重分布密切相关。它们还强烈影响基于铁电存储器的集成电路的器件到器件和周期到周期的可变性。在HfO2中观察到的RS行为背后的主要机制是Vo的浓度、迁移和团聚，这表明器件在工作电压、开关速度、开/关比、模拟电导调制、续航和保持方面的性能和可靠性对Vo敏感。因此，有必要了解Vo的形成机理及其对铁电和RS HfO2的化学、物理和电学性能的影响。本研究从HfO2中Vo的形成及其影响机理到材料性能和器件性能等方面全面综述了相关文献。本文综述了当前基于hfo2的半导体器件的知识和技术的协同进步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano Convergence Engineering-General Engineering

CiteScore

15.90

自引率

2.60%

发文量

审稿时长

13 weeks

期刊介绍： Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects. Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.