Atomic layer deposition-fabricated two-dimensional MoO3-WO3 nanohybrid thin-film electrode for ultrasensitive and interference-free detection of dopamine

IF 10.61 Q3 Biochemistry, Genetics and Molecular Biology
Nasrin Siraj Lopa , Mohammad Karbalaei Akbari , Hong Liang Lu , Serge Zhuiykov
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引用次数: 0

Abstract

Atomically thin two-dimensional (2D) semiconductors and their hybrid electrodes show great promise in the advancement of neural sensors for detecting neurotransmitters either through implantation on the brain's surface or by direct detection in biological fluids. This research demonstrated the fabrication of a sub-10 nm thick 2D MoO3-WO3 heterostructure electrode via atomic layer deposition (ALD) for the first time to detect dopamine (DA). The developed thin-film with uniform surface morphology possessed monoclinic and orthorhombic crystal structures of WO3 and MoO3, respectively, with the presence of oxygen vacancies and their sub-stoichiometric phases. The MoO3-WO3 sensor showed excellent catalytic activity for the interference-free detection of DA by suppressing the redox activity of common interferences, ascorbic acid (AA) and uric acid (UA). The ultra-sensitivity of DA oxidation can be ascribed to the effective electrostatic interaction and chemical coordination between the positively charged DA (at pH 7.0) and the MoO3-WO3. In contrast, the predominant electrostatic repulsive force between the negatively charged AA and UA (at pH 7.0) and the MoO3-WO3 suppressed their electrochemical responses. The sensor showed a nanomolar detection limit (20 nM) and a wide linear range for DA detection, which is highly appropriate for its determination in biological samples. Additionally, the sensor demonstrated excellent electrochemical stability, high reproducibility, and good recoveries of DA determination in diluted human serum samples.

Abstract Image

原子层沉积法制备二维MoO3-WO3纳米杂化薄膜电极,用于超灵敏无干扰检测多巴胺
原子薄的二维(2D)半导体及其混合电极在神经传感器的进步中显示出巨大的希望,通过植入大脑表面或直接检测生物液体来检测神经递质。本研究首次采用原子层沉积(ALD)法制备了厚度低于10 nm的二维MoO3-WO3异质结构电极,用于检测多巴胺(DA)。制备的薄膜表面形貌均匀,分别具有WO3和MoO3的单斜晶型和正交晶型结构,并存在氧空位及其亚化学计量相。MoO3-WO3传感器通过抑制常见干扰物抗坏血酸(AA)和尿酸(UA)的氧化还原活性,对DA的无干扰检测表现出良好的催化活性。带正电的DA (pH 7.0)与MoO3-WO3之间发生了有效的静电相互作用和化学配位。相反,带负电荷的AA和UA (pH 7.0)与MoO3-WO3之间的主要静电斥力抑制了它们的电化学反应。该传感器检测限为纳摩尔(20nm),线性范围宽,适用于生物样品中DA的检测。此外,该传感器在稀释的人血清样品中具有良好的电化学稳定性、高重现性和良好的DA测定回收率。
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来源期刊
Biosensors and Bioelectronics: X
Biosensors and Bioelectronics: X Biochemistry, Genetics and Molecular Biology-Biophysics
CiteScore
4.60
自引率
0.00%
发文量
166
审稿时长
54 days
期刊介绍: Biosensors and Bioelectronics: X, an open-access companion journal of Biosensors and Bioelectronics, boasts a 2020 Impact Factor of 10.61 (Journal Citation Reports, Clarivate Analytics 2021). Offering authors the opportunity to share their innovative work freely and globally, Biosensors and Bioelectronics: X aims to be a timely and permanent source of information. The journal publishes original research papers, review articles, communications, editorial highlights, perspectives, opinions, and commentaries at the intersection of technological advancements and high-impact applications. Manuscripts submitted to Biosensors and Bioelectronics: X are assessed based on originality and innovation in technology development or applications, aligning with the journal's goal to cater to a broad audience interested in this dynamic field.
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