Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and deposition

Abstract

The use of distributed electron cyclotron resonance (DECR) plasma sources for plasma-based ion implantation (PBII) presents limitations in terms of plasma density, limited to the critical density, and of uniformity, due to the difficulty of achieving constant amplitude standing wave patterns along linear microwave applicators in the meter range. The alternative solution presented in this study is the extension of the concept of distribution from one- to two- or tri-dimensional networks of elementary plasma sources sustained at electron cyclotron resonance. With the so-called multi-dipolar plasmas, large volumes of uniform plasma can thus be obtained by assembling as many such elementary plasma sources as necessary, without any physical or technical limitations. Besides scaling up, multi-dipolar plasmas exhibits other advantages such as wide pressure (from less than 10⁻² Pa to a few Pa) and density (from 10⁹ to 10¹² cm⁻³) operating ranges, and a total flexibility in terms of design, allowing plasma-assisted chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) in combination with plasma-based ion implantation. The novel capabilities offered by this technology will be illustrated with a few selected examples.