Proposal of Tilt-Axis Adjustment in V-NAND Plan-View without Si Substrate Using Automated Metrology of Transmission Electron Microscope

Dong-yeob Kim, Su-yeon Kim, Woo-jun Kwon, Min-kook Kim, Christopher H. Kang
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Abstract

Abstract In this paper, we propose a method to get more accurate metrology data using the tilt-axis on a transmission electron microscope (TEM) to compensate for microscopic tilt-axis changes that occur during focused ion beam (FIB) sample preparation processing. This method was developed using V-NAND plan-view samples which require channel hole measurements for each layer to support process monitoring. To test this method, we obtained the same image by progressively tilting the alpha and beta axes one degree in the positive and negative direction using a V-NAND planar sample. The strongest contrast edge was found by contrast profile analysis of each edge of the V-NAND channel using automated software. Through this method, we were able to optimize the sample position and automate the process to capture high quality images to accurately measure V-NAND channel holes. The details are discussed in this paper.
利用透射电镜自动测量技术实现无Si衬底V-NAND平面视图的倾斜轴调整
本文提出了一种利用透射电子显微镜(TEM)上的倾斜轴来补偿聚焦离子束(FIB)样品制备过程中发生的微观倾斜轴变化的方法,以获得更准确的计量数据。该方法是使用V-NAND平面视图样本开发的,需要对每层进行通道孔测量以支持过程监控。为了测试这种方法,我们使用V-NAND平面样品在正负方向上逐步倾斜α轴和β轴一度,从而获得相同的图像。利用自动化软件对V-NAND通道的每个边缘进行对比分析,发现最强的对比边缘。通过这种方法,我们能够优化样品位置并自动捕获高质量的图像,以准确测量V-NAND通道孔。本文对其进行了详细的讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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