Formation mechanism of chained and crystallographically oriented pores on n-InP surfaces

IF 3.674 4区工程技术 Q1 Engineering

Applied Nanoscience Pub Date : 2023-10-27 DOI:10.1007/s13204-023-02973-5

Yana Suchikova, Ihor Bohdanov, Sergii Kovachov, Andriy Lazarenko, Aleksandr A. Popov, Tamara Tsebriienko, Zhakyp Karipbayev, Anatoli I. Popov

引用次数: 0

Abstract

This article presents a study of the mechanism of porous space formation on the surface of single-crystal indium phosphide. The dissolution features of crystals of various types of conductivity and crystallographic orientation of the surface are demonstrated. The attention is focused on the formation of pore chain channels on the surface of n-InP (111). The main stages of the pore formation process are highlighted, which are described according to two competing theories—spontaneous seeding and defect–dislocation mechanism.

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n-InP 表面链状和晶体取向孔的形成机制

本文研究了单晶磷化铟表面多孔空间的形成机理。展示了不同导电类型晶体的溶解特征和表面的晶体学取向。研究重点是 n-InP (111) 表面孔链通道的形成。重点介绍了孔隙形成过程的主要阶段，并根据两种相互竞争的理论--自发播种和缺陷-位错机制对其进行了描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Nanoscience Materials Science-Materials Science (miscellaneous)

CiteScore

7.10

自引率

0.00%

发文量

430

期刊介绍： Applied Nanoscience is a hybrid journal that publishes original articles about state of the art nanoscience and the application of emerging nanotechnologies to areas fundamental to building technologically advanced and sustainable civilization, including areas as diverse as water science, advanced materials, energy, electronics, environmental science and medicine. The journal accepts original and review articles as well as book reviews for publication. All the manuscripts are single-blind peer-reviewed for scientific quality and acceptance.