Comparative investigation on organosilicon film growth by cyclonic plasma using hexamethyldisilazane and hexamethyldisilazane/nitrogen gas mixture

IF 1.6 4区 化学 Q4 CHEMISTRY, PHYSICAL
Li‐Yu Wu, Shu‐Mei Wang, Ya‐Shin Ji, Chun Huang
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Abstract

This study aimed to discover the surface characteristics of cyclonic plasma‐deposited films and the effect of nitrogen gas addition. The influence of nitrogen gas addition on the surface characteristics of organosilicon films in hexamethyldisilazane (HMDSN) and HMDSN/nitrogen (HMDSN/N 2 ) cyclonic plasmas at atmospheric pressure was evaluated. It was found that the addition of nitrogen gas is a crucial factor affecting organosilicon film growth in the plasma cyclone in one atmosphere. SEM, AFM, and ATR‐FTIR results indicated that on adding nitrogen gas, the surface morphology became rougher, the peak corresponding to the Si–O–Si group was detected at approximately 1050 cm −1 , the degree of porosity was relatively low, and the proportion of the SiCHx group decreased. In general, the surface energies of the films deposited in the HMDSN discharge and the HMDSN/N 2 gas mixture discharge exhibited similar features. SEM and AFM evaluations showed high roughness values of 44.5 nm for the film formation in the HMDSN/N 2 gas mixture discharge, while the films grown in the HMDSN discharge exhibited a relatively flat surface with a roughness of 24.5 nm. Based on ATR‐FTIR detection, cyclonic plasma‐deposited films deposited in the HMDSN discharge obtained organic moieties, while the films generated in the HMDSN/N 2 gas mixture discharge exhibited strong Si–O–Si absorption signals. A possible nano‐organosilicon film growth that prevails in atmospheric pressure plasma deposition is proposed based on atmospheric‐pressure plasma chemistry, nitrogen gas addition, and experimental observations.
六亚甲基二氮氮和六亚甲基二氮氮/氮气混合物在旋流等离子体中生长有机硅薄膜的比较研究
本研究旨在探讨旋流等离子体沉积膜的表面特性及氮气的加入对膜的影响。研究了常压下氮气加入对六甲基二氮杂烷(HMDSN)和HMDSN/氮气(HMDSN/ n2)旋风等离子体中有机硅膜表面特性的影响。结果表明,氮气的加入是影响等离子体旋风中有机硅膜生长的关键因素。SEM、AFM和ATR‐FTIR结果表明,加入氮气后,表面形貌变得粗糙,Si-O-Si基团对应的峰出现在约1050 cm−1处,孔隙度相对较低,SiCHx基团的比例下降。总的来说,HMDSN放电和HMDSN/ n2气体混合放电中沉积的膜的表面能表现出相似的特征。SEM和AFM评价表明,HMDSN/ n2气体混合放电形成的膜具有44.5 nm的高粗糙度,而HMDSN放电生长的膜具有相对平坦的表面,粗糙度为24.5 nm。基于ATR - FTIR检测,HMDSN放电中沉积的旋流等离子体沉积膜获得了有机部分,而HMDSN/ n2气体混合放电中生成的膜表现出强烈的Si-O-Si吸收信号。基于常压等离子体化学、氮气添加和实验观察,提出了常压等离子体沉积中普遍存在的一种可能的纳米有机硅膜生长。
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来源期刊
Surface and Interface Analysis
Surface and Interface Analysis 化学-物理化学
CiteScore
3.30
自引率
5.90%
发文量
130
审稿时长
4.4 months
期刊介绍: Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).
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