Fabrication and Characterization CoZrO Films Deposited by Facing Targets Reactive Sputtering for Micromagnetic Inductors

IF 1.1 4区物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Magnetics Letters Pub Date : 2023-09-28 DOI:10.1109/LMAG.2023.3320495

Honami Nitta;Yota Takamura;Tadayuki Kaneko;Shigeki Nakagawa

{"title":"Fabrication and Characterization CoZrO Films Deposited by Facing Targets Reactive Sputtering for Micromagnetic Inductors","authors":"Honami Nitta;Yota Takamura;Tadayuki Kaneko;Shigeki Nakagawa","doi":"10.1109/LMAG.2023.3320495","DOIUrl":null,"url":null,"abstract":"In recent years, there has been a strong demand for soft magnetic films suitable for high-frequency micromagnetic devices as power electronics circuits to operate at higher frequencies. Specifically, there is a need for magnetic thin films with ferromagnetic resonance frequencies (\n<italic>f\nr\n) in the range of several gigahertz. Nanogranular CoZrO thin films have emerged as promising candidates due to their high \n<italic>f\nr\n and high electrical resistivity. We fabricated CoZrO thin films using facing targets reactive sputtering with oxygen as the reactive gas. As the oxygen partial pressure ratio (\n<italic>P\nO2\n) was gradually increased up to 0.8%, clear uniaxial magnetic anisotropy appeared, leading to improved soft magnetic properties. At a \n<italic>P\nO2\n of 0.8%, the film exhibited the most superior soft magnetic properties. With further increase in \n<italic>P\nO2\n, magnetic loops implying a stripe magnetic-domain structure were obtained. In this \n<italic>P\nO2\n range, phase separation was observed, along with a sharp increase in electrical resistivity. \n<italic>f\nr\n of the CoZrO film formed at \n<italic>P\nO2\n = 0.8% was determined to be 3.2 GHz from high-frequency permeability measurement. We have confirmed the effectiveness of facing targets’ reactive sputtering in preparing CoZrO films with excellent soft magnetic properties.","PeriodicalId":13040,"journal":{"name":"IEEE Magnetics Letters","volume":null,"pages":null},"PeriodicalIF":1.1000,"publicationDate":"2023-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Magnetics Letters","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10266663/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In recent years, there has been a strong demand for soft magnetic films suitable for high-frequency micromagnetic devices as power electronics circuits to operate at higher frequencies. Specifically, there is a need for magnetic thin films with ferromagnetic resonance frequencies ( f _r ) in the range of several gigahertz. Nanogranular CoZrO thin films have emerged as promising candidates due to their high f _r and high electrical resistivity. We fabricated CoZrO thin films using facing targets reactive sputtering with oxygen as the reactive gas. As the oxygen partial pressure ratio ( P _O2 ) was gradually increased up to 0.8%, clear uniaxial magnetic anisotropy appeared, leading to improved soft magnetic properties. At a P _O2 of 0.8%, the film exhibited the most superior soft magnetic properties. With further increase in P _O2 , magnetic loops implying a stripe magnetic-domain structure were obtained. In this P _O2 range, phase separation was observed, along with a sharp increase in electrical resistivity. f _r of the CoZrO film formed at P _O2 = 0.8% was determined to be 3.2 GHz from high-frequency permeability measurement. We have confirmed the effectiveness of facing targets’ reactive sputtering in preparing CoZrO films with excellent soft magnetic properties.

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微磁电感器用面靶反应溅射沉积CoZrO薄膜的制备与表征

近年来，对适合高频微磁器件作为电力电子电路在更高频率下工作的软磁薄膜的需求很大。具体地说，需要铁磁共振频率(fr)在几兆赫兹范围内的磁性薄膜。纳米颗粒CoZrO薄膜由于其高电阻率和高电阻率而成为有希望的候选材料。以氧为反应气体，采用面靶反应溅射法制备了CoZrO薄膜。随着氧分压比(PO2)逐渐增大至0.8%，出现了明显的单轴磁各向异性，软磁性能得到改善。在PO2为0.8%时，薄膜表现出最优异的软磁性能。随着PO2的进一步增加，得到了具有条形磁畴结构的磁环。在这个PO2范围内，观察到相分离，以及电阻率的急剧增加。在PO2 = 0.8%时形成的CoZrO膜，通过高频磁导率测量确定为3.2 GHz。我们已经证实了面对目标的反应溅射在制备具有优异软磁性能的CoZrO薄膜中的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Magnetics Letters PHYSICS, APPLIED-

CiteScore

2.40

自引率

0.00%

发文量

期刊介绍： IEEE Magnetics Letters is a peer-reviewed, archival journal covering the physics and engineering of magnetism, magnetic materials, applied magnetics, design and application of magnetic devices, bio-magnetics, magneto-electronics, and spin electronics. IEEE Magnetics Letters publishes short, scholarly articles of substantial current interest. IEEE Magnetics Letters is a hybrid Open Access (OA) journal. For a fee, authors have the option making their articles freely available to all, including non-subscribers. OA articles are identified as Open Access.