Theoretical approach to thermal sensitivity capability of metal-semiconductor diodes with different Schottky contact area

Abstract

Many of the device parameters measured in scientific research and engineering applications depend on the ambient temperature to varying degrees. A Schottky barrier diode (SBD) is in direct contact with the environment, namely, gas, pressure, and temperature; therefore, a change in the state of the Schottky contact (SC) immediately affects its parameters in contrast to the p-n junction and semiconductor transistors. The temperature sensitivity capability of the Au/n-GaAs SBDs has been analyzed by numerical simulation of its current–voltage characteristics using a thermionic emission relation. The obtained results from the simulation study have shown that the thermal sensitivity of the SBDs has increased with a decrease in the current level value at the same SC area size, and it has decreased with a decrease in the SC area size under the same current level. Moreover, it has been concluded from the fact that a SBD with a large SC area should be operated for the cryogenic temperature range under a low current level rather than high current levels. The results of this kind of study can help us to select the SC dimension suitable for many purposes in scientific research and engineering applications.