NvMISC: Toward an FPGA-Based Emulation Platform for RISC-V and Nonvolatile Memories

IF 1.7 4区 计算机科学 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Yuankang Zhao;Salim Ullah;Siva Satyendra Sahoo;Akash Kumar
{"title":"NvMISC: Toward an FPGA-Based Emulation Platform for RISC-V and Nonvolatile Memories","authors":"Yuankang Zhao;Salim Ullah;Siva Satyendra Sahoo;Akash Kumar","doi":"10.1109/LES.2023.3299202","DOIUrl":null,"url":null,"abstract":"The emerging nonvolatile memories (NVMs), such as spin transfer torque random access memory (STT-RAM) and racetrack memory (RTM), offer a promising solution to satisfy the memory and performance requirements of modern applications. Compared to the commonly utilized volatile static random-access memories (SRAMs), the NVMs provide better capacity and energy efficiency. However, many of these NVMs are still in the development phases and require proper evaluation in order to evaluate the impact of their use at the system level. Therefore, there is a need to design functional- and cycleaccurate simulators/emulators to evaluate the performance of these memory technologies. To this end, this work focuses on implementing a RISC-V-based emulation platform for evaluating NVMs. The proposed framework provides interfaces to integrate various types of NVMs, with RTMs and STT-RAMs used as test cases. The efficacy of the framework is evaluated by executing benchmark applications.","PeriodicalId":56143,"journal":{"name":"IEEE Embedded Systems Letters","volume":"15 4","pages":"170-173"},"PeriodicalIF":1.7000,"publicationDate":"2023-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Embedded Systems Letters","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10262015/","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

The emerging nonvolatile memories (NVMs), such as spin transfer torque random access memory (STT-RAM) and racetrack memory (RTM), offer a promising solution to satisfy the memory and performance requirements of modern applications. Compared to the commonly utilized volatile static random-access memories (SRAMs), the NVMs provide better capacity and energy efficiency. However, many of these NVMs are still in the development phases and require proper evaluation in order to evaluate the impact of their use at the system level. Therefore, there is a need to design functional- and cycleaccurate simulators/emulators to evaluate the performance of these memory technologies. To this end, this work focuses on implementing a RISC-V-based emulation platform for evaluating NVMs. The proposed framework provides interfaces to integrate various types of NVMs, with RTMs and STT-RAMs used as test cases. The efficacy of the framework is evaluated by executing benchmark applications.
面向RISC-V和非易失性存储器的fpga仿真平台
新兴的非易失性存储器(nvm),如自旋传递扭矩随机存取存储器(STT-RAM)和赛道存储器(RTM),提供了一个有前途的解决方案,以满足现代应用的内存和性能要求。与常用的易失性静态随机存取存储器(sram)相比,nvm具有更好的容量和能效。然而,许多nvm仍处于开发阶段,需要进行适当的评估,以评估其在系统级使用的影响。因此,有必要设计功能和周期精确的模拟器/仿真器来评估这些存储技术的性能。为此,本研究的重点是实现一个基于risc - v的仿真平台来评估nvm。该框架提供了集成各种类型nvm的接口,以rtm和stt - ram作为测试用例。通过执行基准应用程序来评估框架的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Embedded Systems Letters
IEEE Embedded Systems Letters Engineering-Control and Systems Engineering
CiteScore
3.30
自引率
0.00%
发文量
65
期刊介绍: The IEEE Embedded Systems Letters (ESL), provides a forum for rapid dissemination of latest technical advances in embedded systems and related areas in embedded software. The emphasis is on models, methods, and tools that ensure secure, correct, efficient and robust design of embedded systems and their applications.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信