DC operating points of Mott neuristor circuits

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Joseph P. Wright , Stephen A. Sarles , Jin-Song Pei
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引用次数: 0

Abstract

In 1960 Hewitt Crane conceptualized neuristors as electronic logic networks that could mimic action potential generation by biological neurons. In 2012 Mott memristors were presented as nano-scale electronic devices for physically constructing neuristor networks. Both the original Mott memristor model and the simplified model presented in 2020 are stiff nonlinear first-order ordinary differential equations (ODEs) that describe the voltage controlled threshold switching and current controlled negative differential resistance, attributed to a Mott insulator-to-metal phase transition. By design, a Mott neuristor contains two identical Mott memristors plus linear resistors and capacitors (no inductors), which enables alternating threshold switching by the memristors to generate periodic (AC) output voltage spikes in response to a DC current or voltage input. This paper presents a steady-state analysis of dynamic neuristor models, including four-, five-, and six-state variables (each of which is a system of first-order ODEs involving the states) based on the original phenomenological model of the Mott memristor. Specifically, it reveals the unique stable operating points that occur for applied currents or voltages below the amounts needed to induce resistive switching. These DC operating points represent the physically meaningful “OFF” states for the circuit when the neuristor does not output voltage spikes. Jacques Hadamard's mathematical criteria for a well-posed physical model (existence, uniqueness, continuity, stability) motivated the search for these DC operating points (OFF states), which are needed for efficiently initializing neuristor models before conducting dynamic neuristor simulations. The key result of our analysis is the neuristor steady-state eq. (29) which is useful for understanding neuristor OFF states as well as the role of negative-differential resistance (NDR) in the operation of the Mott memristor model and neuristor circuits. In addition to the steady-state analysis, three numerical examples of dynamic neuristor circuit operation are also given and MATLAB code for the dynamic four-state model is available for interested readers.

Abstract Image

Abstract Image

莫特神经元电路的直流工作点
1960 年,休伊特-克莱恩(Hewitt Crane)提出了神经元的概念,即可以模拟生物神经元产生动作电位的电子逻辑网络。2012 年,莫特忆阻器(Mott memristors)作为纳米级电子器件被提出,用于物理构建神经元网络。最初的莫特忆阻器模型和 2020 年提出的简化模型都是僵硬的非线性一阶常微分方程(ODE),描述电压控制的阈值开关和电流控制的负微分电阻,归因于莫特绝缘体到金属的相变。根据设计,莫特神经管包含两个完全相同的莫特忆阻器,外加线性电阻器和电容器(无电感器),这使得忆阻器能够交替进行阈值开关,从而根据直流电流或电压输入产生周期性(交流)输出电压尖峰。本文以莫特忆阻器的原始现象学模型为基础,对动态神经元模型进行了稳态分析,包括四态、五态和六态变量(每个变量都是涉及状态的一阶 ODE 系统)。具体来说,它揭示了当外加电流或电压低于诱导电阻开关所需的量时出现的独特稳定工作点。这些直流工作点代表了当神经元不输出电压尖峰时电路具有物理意义的 "关断 "状态。雅克-哈达玛(Jacques Hadamard)提出的物理模型数学标准(存在性、唯一性、连续性、稳定性)促使我们寻找这些直流工作点(关断状态),这是在进行动态神经元仿真之前有效初始化神经元模型所必需的。我们分析的关键结果是神经管稳态式(29),它有助于理解神经管的关断状态以及负差分电阻(NDR)在莫特忆阻器模型和神经管电路运行中的作用。除了稳态分析之外,还给出了三个动态神经管电路工作的数值示例,并为感兴趣的读者提供了动态四态模型的 MATLAB 代码。
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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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