Manikandan Gunasekaran, Dhanalakshmi Dhandapani, Manivel Raja Muthuvel
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引用次数: 0
Abstract
An organic semiconductor (OSC) is a potential material in spintronics which is posses a long spin diffusion length due to its low spin-orbit coupling and hyperfine interaction. Among the OSC P3HT that already exists, in spintronic devices. In this report, An organic spin valve (OSV) device was fabricated using Regioregular Poly 3-hexylthiophene-2,5- diyl (RR-P3HT). The RR-P3HT was used as a spacer layer, with FeCo and NiFe used as bottom and top electrodes, respectively. The device magnetoresistance (MR) was observed to be a positive MR of 2.9% at 50 K while negative MR of 0.6, 0.4, and 0.014% were observed at 150, 200, and 300 K, respectively. Observed AMR is positive at room temperature for Feco and NiFe single layer as 0.08 and 0.18%, respectively. The magnetic electrodes were prepared using Ultra High Vacuum DC magnetron sputtering, and RR-P3HT was prepared using a spin coater. The magnetic properties of the device were studied by vibrating sample magnetometer (VSM) analysis. The VSM results conclude that both electrodes are magnetic materials with different coercive forces. The FeCo and NiFe, both electrodes crystal structures were analyzed from Gracing Incidence X-Ray Diffraction (GI-XRD) using Cobalt K alpha. FeCo and NiFe were the Body-Centered Cubic crystal structures, and the electrode’s JCPDS card numbers are 50–0795 and 37–0474, respectively.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.