Large‐area growth of monolayer MoS2 by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process

Abstract

The epitaxial growth of high‐quality and large‐area monolayer (ML) MoS 2 has attracted widespread attention in recent years. Here, MoS 2 on Al 2 O 3 substrate was prepared by using atmospheric‐pressure chemical vapor deposition. The process parameters such as temperature difference and distance between MoO 3 and Al 2 O 3 , nucleation temperature, and heating rate were optimized. The high MoO 3 evaporation temperature facilitates Mo vapor transport to grow ML‐MoS 2 . The introduction of nucleation temperature facilitates the deposition of MoS 2 , and the morphology of the nucleation point is related to the amount of MoO 3‐x deposited on Al 2 O 3 . This process optimization method is also applicable to growth MoS 2 on SiO 2 . The ML‐MoS 2 with a size greater than 1 cm 2 was successfully fabricated on Al 2 O 3 and SiO 2 , which laid a foundation for the practical application of ML‐MoS 2 .