Low-temperature dielectric and impedance properties of Ba1-xSrxTiO3 and BaTi1-xTaxO3 ceramics

IF 0.9 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS
Depeng Wang, Ruifeng Niu, Liqi Cui, Weitian Wang
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引用次数: 0

Abstract

In this work, two series of BaTiO3-based ceramics, Ba1-xSrxTiO3 (x = 0, 0.2, 0.4, 0.6, 0.8) and BaTi1-xTaxO3 (x = 0.03, 0.06, 0.075, 0.09, 0.1), were synthesized by using standard solid-state reaction method at 1350 ?C, and then sintered at 1400 ?C for 10 h in air. Frequency-dependent dielectric and impedance properties were investigated at low temperature range of 100-300K. The changes in dielectric properties of the Ba1-xSrxTiO3 ceramics are believed to originate from the phase transition due to the different A-site Sr2+ doping concentration. The local electron-pinned defect-dipole effect is responsible for the enhancement of dielectric constant observed in the B-site Ta5+ doped BaTi1-xTaxO3 ceramics. The complex impedance analysis was used to discern the temperature and frequency dependence of grains and grain boundaries responses. The results suggest that A- and B-site doped BaTiO3 ceramics can be applied for different dielectric devices at low temperatures.
Ba1-xSrxTiO3和BaTi1-xTaxO3陶瓷的低温介电和阻抗特性
本文采用标准固相法在1350℃下合成了Ba1-xSrxTiO3 (x = 0、0.2、0.4、0.6、0.8)和BaTi1-xTaxO3 (x = 0.03、0.06、0.075、0.09、0.1)两系batio3基陶瓷,并在1400℃空气中烧结10 h。在100-300K的低温范围内研究了频率相关的介电和阻抗特性。Ba1-xSrxTiO3陶瓷介电性能的变化源于不同a位Sr2+掺杂浓度引起的相变。在b位Ta5+掺杂的BaTi1-xTaxO3陶瓷中,局部电子钉住缺陷偶极子效应导致了介电常数的提高。采用复阻抗分析方法分析了晶粒和晶界响应的温度和频率依赖性。结果表明,A位和b位掺杂的BaTiO3陶瓷可以在低温下应用于不同的介电器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Processing and Application of Ceramics
Processing and Application of Ceramics MATERIALS SCIENCE, CERAMICS-
CiteScore
1.90
自引率
9.10%
发文量
14
审稿时长
10 weeks
期刊介绍: Information not localized
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