Beyond 20% World Record Efficiency for Thin-Film Solar Modules

IF 2.5 3区工程技术 Q3 ENERGY & FUELS

IEEE Journal of Photovoltaics Pub Date : 2023-10-30 DOI:10.1109/JPHOTOV.2023.3326559

Hossam Elanzeery;Marko Stölzel;Patrick Eraerds;Peter Borowski;Hisham Aboulfadl;Alberto Lomuscio;Detlef Helmecke;Christian Schubbert;Souhaib Oueslati;Matej Hála;Julian Röder;Florian Giesl;Thomas Dalibor

{"title":"Beyond 20% World Record Efficiency for Thin-Film Solar Modules","authors":"Hossam Elanzeery;Marko Stölzel;Patrick Eraerds;Peter Borowski;Hisham Aboulfadl;Alberto Lomuscio;Detlef Helmecke;Christian Schubbert;Souhaib Oueslati;Matej Hála;Julian Röder;Florian Giesl;Thomas Dalibor","doi":"10.1109/JPHOTOV.2023.3326559","DOIUrl":null,"url":null,"abstract":"We report on crossing the 20% efficiency line for thin-film solar modules. The efficiency of our cadmium-free Cu(In,Ga)(S,Se)\n2\n (CIGSSe) mid-sized modules (30 × 30 cm\n2\n) based on the cost-efficient AVANCIS stacked elemental layer – rapid thermal processing absorber process has evolved in the last two years reaching 19.6%, 19.8% and recently we have achieved an efficiency level of 20.3% as independently measured by NREL. The recent improvements were made possible by thorough variations in absorber composition and elemental distribution. The optimization of the absorber thickness, and of the band gap profile through the engineering of sulfur content and gradient at the absorber surface induces an improved absorber quality leading to a distinct increase in the product of short circuit current density and open circuit voltage (J\nSC\n × V\nOC\n). Moreover, improving the absorber homogeneity and adjusting the absorber-buffer interface play an important role in enhancing the fill factor.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"14 1","pages":"107-115"},"PeriodicalIF":2.5000,"publicationDate":"2023-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10301701","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10301701/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}

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Abstract

We report on crossing the 20% efficiency line for thin-film solar modules. The efficiency of our cadmium-free Cu(In,Ga)(S,Se) ₂ (CIGSSe) mid-sized modules (30 × 30 cm ² ) based on the cost-efficient AVANCIS stacked elemental layer – rapid thermal processing absorber process has evolved in the last two years reaching 19.6%, 19.8% and recently we have achieved an efficiency level of 20.3% as independently measured by NREL. The recent improvements were made possible by thorough variations in absorber composition and elemental distribution. The optimization of the absorber thickness, and of the band gap profile through the engineering of sulfur content and gradient at the absorber surface induces an improved absorber quality leading to a distinct increase in the product of short circuit current density and open circuit voltage (J _SC × V _OC ). Moreover, improving the absorber homogeneity and adjusting the absorber-buffer interface play an important role in enhancing the fill factor.

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薄膜太阳能电池组件效率突破 20% 世界纪录

我们报告了薄膜太阳能组件效率突破 20% 的情况。我们的无镉铜铟镓硒 (CIGSSe) 中型模块（30 × 30 cm2）基于具有成本效益的 AVANCIS 堆叠元素层--快速热处理吸收器工艺，其效率在过去两年中不断提高，先后达到 19.6%、19.8%，最近我们的效率水平达到了 20.3%，这是由 NREL 独立测量的结果。最近的改进得益于吸收器成分和元素分布的彻底改变。通过对吸收器表面的硫含量和梯度进行工程设计，优化吸收器厚度和带隙剖面，提高了吸收器质量，从而显著增加了短路电流密度和开路电压的乘积（JSC × VOC）。此外，改善吸收器的均匀性和调整吸收器-缓冲器界面在提高填充因子方面也发挥了重要作用。

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来源期刊

IEEE Journal of Photovoltaics ENERGY & FUELS-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

7.00

自引率

10.00%

发文量

206

期刊介绍： The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.