Terahertz photoconductive antennas based on silicon-doped GaAs (111)A

IF 2.6 4区物理与天体物理 Q2 PHYSICS, APPLIED

International Journal of Modern Physics B Pub Date : 2023-10-09 DOI:10.1142/s0217979224503788

Evgeniy Klimov, Aleksey Klochkov, Petr Solyankin, Sergei Pushkarev, Galib Galiev, Nataliya Yuzeeva, Aleksandr Shkurinov

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引用次数: 0

Abstract

In this study we investigate a relatively new material for terahertz (THz) photoconductive antennas (PCAs): GaAs epitaxial films grown on (111)A-oriented semi-insulated GaAs substrates and doped with Si. GaAs:Si (111)A films with the required high resistance without postgrowth annealing have been grown by molecular-beam epitaxy. The Si doping of (111)A-oriented GaAs was expected to lead to the formation of acceptors that facilitate the activation of As[Formula: see text] traps. The relaxation times of nonequilibrium charge carriers in the films were measured in pump-probe experiment, and, finally, the electron mobility was estimated from the carrier lifetime and current–voltage characteristics measured under pulsed pumping by Ti:sapphire femtosecond laser. Dipole and bow-tie PCAs were fabricated, and the THz emission spectra and the total THz emission power were measured with varying applied voltage and optical excitation power. The properties of GaAs:Si (111)A films and the PCAs based on them are compared with LTG-GaAs (100) and (111)A-oriented films.

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基于掺硅GaAs (111)A的太赫兹光导天线

在这项研究中，我们研究了一种相对较新的太赫兹(THz)光导天线(PCAs)材料:生长在(111)a取向的半绝缘GaAs衬底上并掺杂Si的GaAs外延膜。采用分子束外延法制备了具有高电阻的GaAs:Si (111)A薄膜。(111) a取向GaAs的Si掺杂有望导致形成促进As激活的受体[公式:见文本]陷阱。通过泵浦-探针实验测量了薄膜中非平衡载流子的弛豫时间，最后利用钛蓝宝石飞秒激光脉冲泵浦测量的载流子寿命和电流-电压特性估计了电子迁移率。制备了偶极子和领结聚苯乙烯，测量了不同外加电压和光激发功率下的太赫兹发射光谱和总太赫兹发射功率。比较了GaAs:Si (111)A薄膜和基于它们的PCAs薄膜与LTG-GaAs(100)和(111)A取向薄膜的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Modern Physics B 物理-物理：凝聚态物理

CiteScore

3.70

自引率

11.80%

发文量

417

审稿时长

3.1 months

期刊介绍： Launched in 1987, the International Journal of Modern Physics B covers the most important aspects and the latest developments in Condensed Matter Physics, Statistical Physics, as well as Atomic, Molecular and Optical Physics. A strong emphasis is placed on topics of current interest, such as cold atoms and molecules, new topological materials and phases, and novel low dimensional materials. One unique feature of this journal is its review section which contains articles with permanent research value besides the state-of-the-art research work in the relevant subject areas.