Synergistic effect between molybdenum back contact and CIGS absorber in the degradation of solar cells

IF 8 2区 材料科学 Q1 ENERGY & FUELS
Adèle Debono, Hortense L'Hostis, Amelle Rebai, Erlind Mysliu, Inger Odnevall, Nathanaelle Schneider, Jean-François Guillemoles, Andreas Erbe, Polina Volovitch
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Abstract

The stability of molybdenum (Mo) back contact and Cu (InxGa(1-x)Se2(CIGS) absorber layers interfaces relevant for CIGS-based solar cells was investigated using accelerated aging test, considering humidity and temperature daily variations as well as atmospheric pollution. Different configurations of sputtered Mo and co-evaporated CIGS layers deposited on soda lime glass with or without ALD-Al2O3 encapsulation were investigated. They were exposed for 14 days to 24 h-cycles of temperature and humidity (25°C at 85% RH and 80°C at 30% RH) with and without solution of the pollutant salts (NaCl, Na2SO4, and (NH4)2SO4) deposited as drops on the sample to mimic marine, industrial, and rural atmospheric conditions, respectively. ALD-Al2O3 encapsulation failed to protect the samples against the pollutants regardless of configuration. The evolution of the films was characterized by Raman spectroscopy, grazing incidence X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. Unencapsulated Mo degraded forming a mixture of oxides (MoO2, MoO3, and Mo8O23). Unencapsulated CIGS on glass substrates was not altered, whereas dark spots were visible at the surface of Mo/CIGS configurations. Further characterization evidenced that even though the Mo layer was buried, its corrosion products were formed on top of CIGS. Mo corrosion products and copper selenide, Cu2-xSe, were identified in dark spots. Their formation and evolution were further investigated by in situ Raman spectroscopy. A speculative mechanism explaining the interplay of molybdenum and CIGS layers during aging is proposed. In place of Mo oxides, detected on the open surface of bare Mo, soluble molybdates are expected in confined environment where alkalinity locally increases. The molybdate ions may then react with sodium ions accumulated at the grain boundaries of CIGS, forming Na2MoO4. The latter could form Na2Mo2O7 during drying because of pH decrease by atmospheric CO2 adsorption. High pH in confined zone, combined with relatively high temperature, is also believed to lixiviate gallium into soluble tetragallates [Ga (OH)4]2−, which could precipitate into Ga2O3 with pH decrease leaving Ga depleted Cu2-xSe.

Abstract Image

Abstract Image

钼背触点和 CIGS 吸收体在太阳能电池降解过程中的协同效应
考虑到湿度和温度的日变化以及大气污染,利用加速老化试验研究了与基于 CIGS 的太阳能电池相关的钼(Mo)背触点和铜(InxGa(1-x)Se2(CIGS))吸收层界面的稳定性。研究了沉积在钠钙玻璃上的不同配置的溅射钼层和共蒸发 CIGS 层(有或没有 ALD-Al2O3 封装)。在样品上滴入或不滴入污染物盐(NaCl、Na2SO4 和 (NH4)2SO4)溶液,分别模拟海洋、工业和农村大气环境条件下,将它们暴露在 24 小时的温度和湿度循环(25°C,85% RH 和 80°C,30% RH)中 14 天。无论如何配置,ALD-Al2O3 封装都无法保护样品免受污染物的影响。拉曼光谱、掠入射 X 射线衍射、X 射线光电子能谱、扫描电子显微镜和能量色散 X 射线能谱对薄膜的演变进行了表征。未封装的 Mo 降解后形成了氧化物混合物(MoO2、MoO3 和 Mo8O23)。玻璃基板上未封装的 CIGS 没有发生变化,而 Mo/CIGS 配置的表面则出现了黑斑。进一步的表征证明,即使 Mo 层被掩埋,其腐蚀产物也会在 CIGS 表面形成。在暗斑中发现了钼腐蚀产物和硒化铜(Cu2-xSe)。我们通过原位拉曼光谱进一步研究了它们的形成和演变过程。提出了一种老化过程中钼和 CIGS 层相互作用的推测机制。在裸钼的开放表面检测到的是钼氧化物,而在局部碱度增加的封闭环境中,预计会出现可溶性钼酸盐。然后,钼酸根离子可能会与 CIGS 晶界处积累的钠离子发生反应,形成 Na2MoO4。后者可能会在干燥过程中形成 Na2Mo2O7,因为大气中的二氧化碳会使 pH 值降低。密闭区的高 pH 值与相对较高的温度相结合,也会使镓活化成可溶性的四镓酸盐 [Ga (OH)4]2-,随着 pH 值的降低,四镓酸盐会沉淀为 Ga2O3,留下贫镓的 Cu2-xSe。
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来源期刊
Progress in Photovoltaics
Progress in Photovoltaics 工程技术-能源与燃料
CiteScore
18.10
自引率
7.50%
发文量
130
审稿时长
5.4 months
期刊介绍: Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers. The key criterion is that all papers submitted should report substantial “progress” in photovoltaics. Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables. Examples of papers that will not be considered for publication are those that report development in materials without relation to data on cell performance, routine analysis, characterisation or modelling of cells or processing sequences, routine reports of system performance, improvements in electronic hardware design, or country programs, although invited papers may occasionally be solicited in these areas to capture accumulated “progress”.
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